D
D. Costa
Researcher at Stanford University
Publications - 14
Citations - 438
D. Costa is an academic researcher from Stanford University. The author has contributed to research in topics: Heterojunction bipolar transistor & Bipolar junction transistor. The author has an hindex of 8, co-authored 14 publications receiving 436 citations.
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Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit
TL;DR: In this paper, a direct technique for determining the small-signal equivalent circuit of a heterojunction bipolar transistor (HBT) is described, where the parasitic elements are largely determined from measurements of test structures.
Direct Extraction of the AlGaAs/GaAs Heterojunction Bipolar Transis tor Small- S ig nal Equivalent Circuit
TL;DR: In this paper, a technique for determining the small-signal equivalent-circuit model of an AIGaAs/GaAs heterojunction bipolar transistor (HBT) is presented.
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Theoretical comparison of base bulk recombination current and surface recombination current of a mesa AlGaAs/GaAs heterojunction bipolar transistor
TL;DR: An analytical solution for the minority carrier concentration to the 2-D diffusion equation in the base of a mesa-structure bipolar transistor is derived in this paper, which is especially applicable for AlGaAs/GaAs heterojunction bipolar transistors for which the extrinsic base surface has a high surface recombination velocity if the surface is not passivated.
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Current gain of graded AlGaAs/GaAs heterojunction bipolar transistors with and without a base quasi-electric field
TL;DR: In this paper, the experimental results demonstrate that the base current for devices with extrinsic base surface passivation is dominated by base-emitter space charge recombination current, rather than base bulk recombinations current.
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Derivation of the emitter-collector transit time of heterojunction bipolar transistors
TL;DR: In this paper, the authors theoretically demonstrate that the product of the emitter contact resistance and the base-emitter capacitance should not appear in the transit time expression of a heterojunction bipolar transistor.