A new design methodology based on a unified treatment of all the regions of operation of the MOS transistor is proposed. It is intended for the design of CMOS analog circuits and especially suited for low power circuits where the moderate inversion region often is used because it provides a good compromise between speed and power consumption. The synthesis procedure is based on the relation between the ratio of the transconductance over DC drain current g/sub m//I/sub D/ and the normalized current I/sub D//(W/L). The g/sub m//I/sub D/ indeed is a universal characteristic of all the transistors belonging to a same process. It may be derived from experimental measurements and fitted with simple analytical models. The method was applied successfully to the design of a silicon-on-insulator (SOI) micropower operational transconductance amplifier (OTA).

A g/sub m//I/sub D/ based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA

An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW_), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.

Switch Circuit and Method of Switching Radio Frequency Signals

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink

Wireless sensor nodes are autonomous devices incorporating sensing, power, computation, and communication into one system. Applications for large scale networks of these nodes are presented in the context of their impact on the hardware design. The demand for low unit cost and multiyear lifetimes, combined with progress in CMOS and MEMS processing, are driving development of SoC solutions for sensor nodes at the cubic centimeter scale with a minimum number of off-chip components. Here, the feasibility of a complete, cubic millimeter scale, single-chip sensor node is explored by examining practical limits on process integration and energetic cost of short-range RF communication. Autonomous cubic millimeter nodes appear within reach, but process complexity and substantial sacrifices in performance involved with a true single-chip solution establish a tradeoff between integration and assembly.

SoC Issues for RF Smart Dust

A method and apparatus for use in a digitally tuning a capacitor in an integrated circuit device is described. A Digitally Tuned Capacitor DTC is described which facilitates digitally controlling capacitance applied between a first and second terminal. In some embodiments, the first terminal comprises an RF+ terminal and the second terminal comprises an RF− terminal. In accordance with some embodiments, the DTCs comprise a plurality of sub-circuits ordered in significance from least significant bit (LSB) to most significant bit (MSB) sub-circuits, wherein the plurality of significant bit sub-circuits are coupled together in parallel, and wherein each sub-circuit has a first node coupled to the first RF terminal, and a second node coupled to the second RF terminal. The DTCs further include an input means for receiving a digital control word, wherein the digital control word comprises bits that are similarly ordered in significance from an LSB to an MSB.

Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device

Lateral P+-P-P+ SOI transistors functioning in the hybrid mode (i.e. with body connected to gate) have been tested. Although current transport is solely due to holes, these devices exhibit electrical characteristics which are similar to those of a bipolar transistor. A common-emitter current gain of 1400 is observed in devices having an effective channel (base) length of 1.1 mu m.

D. De Ceuster

Papers

P+-p-p+ Pseudo-bipolar Lateral Soi Transistor

CMOS on SOI operational amplifiers for application up to 300°C