This work reports the growth kinetics of amorphous nanowires (NWs) developed by the vapour–liquid–solid (VLS) mechanism. The model presented here incorporates all atomistic processes contributing to the growth of amorphous oxide NWs having diameters in the 5–100 nm range. The steady state growth condition has been described by balancing the key atomistic process steps. It is found that the 2D nano-catalyst liquid and NW solid (L–S) interface plays a central role in the kinetic analysis. The balance between the 2D Si layer crystallization and oxidation rate is quantitatively examined and compared with experimental values. The atomistic process dependencies of the NW growth rate, supersaturation (C/C0), desolvation energy (QD) barrier and NW diameter have been analyzed in detail. The model successfully predicts the reported NW growth rate to be in the range of 1–10 μm s−1. A novel seed/catalyst metal-based synthesis strategy for the preparation of amorphous silica NWs is reported. A nickel thin film on Si is used as a seed metal for the Au assisted VLS growth of silica NWs. The experimental results provide evidence of the creation of SiO under the given conditions followed by Si injection in the Au–Si nano-catalyst solution. The usage of seed metal was observed to reduce the growth temperature compared to the methods reported in the literature and obtain similar growth rates. The technique presented here holds promise for the synthesis of sub-100 nm diameter NWs.

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Propagation of amorphous oxide nanowires via the VLS mechanism: growth kinetics

A steady state kinetic model has been developed for the vapor-liquid-solid growth of Si whiskers or nanowires from liquid catalyst droplets. The steady state is defined as one in which the net injection rate of Si into the droplet is equal to the ejection rate due to wire growth. Expressions that represent specific mechanisms of injection and ejection of Si atoms from the liquid catalyst droplet have been used and their relative importance has been discussed. The analysis shows that evaporation and reverse reaction rates need to be invoked, apart from just surface cracking of the precursor, in order to make the growth rate radius dependent. When these pathways can be neglected, the growth rate become radius independent and can be used to determine the activation energies for the rate limiting step of heterogeneous precursor decomposition. The ejection rates depend on the mechanism of wire growth at the liquid-solid interface or the liquid-solid-vapor triple phase boundary. It is shown that when wire growth is by nucleation and motion of ledges, a radius dependence of growth rate does not just come from the Gibbs-Thompson effect on supersaturation in the liquid, but also from the dependence of the actual area or length available for nucleation. Growth rates have been calculated using the framework of equations developed and compared with experimental results. The agreement in trends is found to be excellent. The same framework of equations has also been used to account for the diverse pressure and temperature dependence of growth rates reported in the literature.

Vapor-liquid-solid growth of Si nanowires: A kinetic analysis

Measurements and modeling of SiCl4 combustion in a low-pressure H2/O2 flame

Modeling silicon epitaxial growth with SiH2Cl2

Semiconducting nanostructures such as nanowires (NWs) have been used as building blocks for various types of sensors, energy storage and generation devices, electronic devices and for new manufacturing methods involving printed NWs. The response of these sensing/energy/electronic components and the new fabrication methods depends very much on the quality of NWs and for this reason it is important to understand the growth mechanism of 1D semiconducting nanostructures. This is also important to understand the compatibility of NW growth steps and tools used in the process with these unconventional substrates such as plastic that are used in flexible and large area electronics. Therefore, this Element presents at length discussion about the growth mechanisms, growth conditions and the tools used for the synthesis of NWs. Although NWs from Si, ZnO and carbon nanotubes (CNTs) are included, the discussion is generic and relevant to several other types of NWs as well as heterostructures.

1D Semiconducting Nanostructures for Flexible and Large-Area Electronics: Growth Mechanisms and Suitability

Modelling of silicon epitaxy using silicon tetrachloride as the source

Modelling of epitaxial growth rate of silicon by vapour phase epitaxy

An improved model for simulating the growth of epitaxial silicon in the vapour phase by pyrolysis of silane (SiH4) in a horizontal reactor at atmospheric pressure has been developed. The model takes into account the variation of reactant concentration and the thickness of the boundary layer with distance inside the reactor. Using the above conditions, an expression for the growth rate of the epi-layer has been derived as a function of temperature, flow rate, mole fraction, position of wafer, etc. A comparison between the theoretically predicted values and experimental results shows satisfactory agreement.

D.K. Pal

Papers

Modelling of silicon epitaxy using silicon tetrachloride as the source

Modelling of epitaxial growth rate of silicon by vapour phase epitaxy

Improved model of silicon epitaxial growth by VPE