D. Revannasiddaiah

TL;DR: In this article, the refractive index and density data were reported for the case of the following eight nematic compounds, viz., (1) p(p-ethoxyphenylazo) phenyl valerate, (2) p-p-phenyl hexanoate, (3) p-(p)-ethoxymhenylozoa)phenyl undecylenate,(4) 4,4′-bis(hexyloxy)azoxybenzene, (5) 4.4′)-bis(heptyloxy

TL;DR: The title compound, 4n-nonylbenzoic acid, CH3(CH2)8C6H4COOH (NBA), has been characterized thus: triclinic, P1, a = 13.514, b = 23.4672, c = 7.658, alpha = 90.914, beta = 100.403, gamma = 77.6 cm-1, goodness-of-fit is 1.029, final R1 = 0.063, wR2 = 0.,

TL;DR: In this paper, NPN RF power transistors were irradiated with 140 MeV Si10+ ions, 100 MeV F8+ ion, 50 MeV Li3+ ions and Co-60 gamma radiation in the dose range from 100 krad to 100 Mrad, and the transistor characteristics were studied before and after irradiation from which the parameters such as Gummel characteristics, excess base current, dc current gain, transconductance (gm), collector-saturation current (ICSat), etc.

TL;DR: In this paper, the effects of 8-MeV electrons and 60 and 95-meV oxygen ions on the electrical properties of Si npn RF power transistors have been investigated as a function of fluence.

TL;DR: In this article, the dc characteristics exhibited by NPN power transistors are studied systematically before and after irradiation by 100 MeV F 8+ ions and 50 MeV Li 3+ ions in the dose range of 100 krad to 100 Mrad.