N
N. Pushpa
Researcher at University of Mysore
Publications - 43
Citations - 270
N. Pushpa is an academic researcher from University of Mysore. The author has contributed to research in topics: Irradiation & Bipolar junction transistor. The author has an hindex of 9, co-authored 40 publications receiving 209 citations. Previous affiliations of N. Pushpa include PES University & Bangalore University.
Papers
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Effect of cobalt doping on structural, thermo and photoluminescent properties of ZnO nanopowders
N. Pushpa,M.K. Kokila +1 more
TL;DR: In this article, Nanocrystalline cobalt doped zinc oxide nanoparticles are synthesized by solution combustion method using sucrose as a fuel and the synthesized samples are characterized by XRD, SEM, FTIR, Micro-Raman, UV-Visible techniques.
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Application of advanced 200 GHz Si–Ge HBTs for high dose radiation environments
K. C. Praveen,N. Pushpa,Y.P. Prabakara Rao,G. Govindaraj,John D. Cressler,A. P. Gnana Prakash +5 more
TL;DR: In this paper, the third generation 200 GHz silicon-germanium Heterojunction Bipolar Transistors (Si-Ge HBTs) were irradiated with high dose Co-60 gamma radiation up to 100 Mrad.
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Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs
TL;DR: In this paper, the effects of 50 MeV lithium ion irradiation on the DC electrical characteristics of first-generation silicon-germanium heterojunction bipolar transistors (50 GHz SiGe HBTs) in the dose range of 600 krad to 100 Mrad were investigated.
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Reliability studies on NPN RF power transistors under swift heavy ion irradiation
N. Pushpa,K. C. Praveen,A. P. Gnana Prakash,P. S. Naik,John D. Cressler,S.K. Gupta,D. Revannasiddaiah +6 more
TL;DR: In this paper, NPN RF power transistors were irradiated with 140 MeV Si10+ ions, 100 MeV F8+ ion, 50 MeV Li3+ ions and Co-60 gamma radiation in the dose range from 100 krad to 100 Mrad, and the transistor characteristics were studied before and after irradiation from which the parameters such as Gummel characteristics, excess base current, dc current gain, transconductance (gm), collector-saturation current (ICSat), etc.
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An investigation of electron and oxygen ion damage in Si npn RF power transistors
TL;DR: In this paper, the effects of 8-MeV electrons and 60 and 95-meV oxygen ions on the electrical properties of Si npn RF power transistors have been investigated as a function of fluence.