Realizing long-term cycling stability and superior rate performance of 4.5 V–LiCoO2 by aluminum doped zinc oxide coating achieved by a simple wet-mixing method

Highly sensitive, self-powered photodetector based on reduced graphene oxide- polyvinyl pyrrolidone fibers (Fs)/p-Si heterojunction

Solution processed aluminum-doped ZnO thin films for transparent heater applications

The effect of oxygen annealing on characteristics of β-Ga2O3 solar-blind photodetectors on SiC substrate by ion-cutting process

Herein, a poly(N-vinyl carbazole) (PVK)/ϵ-gallium oxide (ϵ-Ga2O3) heterojunction device was fabricated by spin coating prepared PVK solution onto a ϵ-Ga2O3 thin film produced by metal-organic chemical vapor deposition. Under 254 nm ultraviolet light, the device shows obvious rectification characteristics of 37 at ±2 V and has a response speed of 0.52 s rise time and 0.11 s decay time at 5 V. Current–voltage measurement confirmed that the prepared device has the potential to become a self-powered photodetector and displays good stability and a fast response speed under various light intensities and different voltages.

https://iopscience.iop.org/article/10.1088/1361-6463/abe6ce/pdf

Fabrication of a poly(N-vinyl carbazole)/ϵ-Ga2O3 organic–inorganic heterojunction diode for solar-blind sensing applications

UV-photocurrent response of zinc oxide based devices: Application to ZnO/PEDOT:PSS hydrid Schottky diodes

$\beta $ -Ga2O3 is one of the promising semiconductor materials that has been widely used in power electronics and ultraviolet (UV) detectors due to its wide bandgap and high sensitivity to UV light. Specifically, for the UV detection application, it has been reported that the photocurrent was in the scale of microamps ( $\mu \text{A}$ ), which normally requires sophisticated signal processing units. In this work, a novel approach based upon coupling of two Schottky diodes is reported, leads to a substantial increase in photocurrent (~186 times) when benchmarked against a conventional planar UV photodiode. The detectivity and responsivity of the new device have also been significantly increased; the rectification ratio of this device was measured to be $1.7\times 10^{7}$ with ultralow dark current, when measured in the reverse bias. The results confirm that the approach of coupling two Schottky diodes has enormous potential for improving the optical performance of deep UV sensors.

/pdf/improvement-of-the-deep-uv-sensor-performance-of-a-b-ga-2-o-51sddh8tcu.pdf

Improvement of the Deep UV Sensor Performance of a β-Ga 2 O 3 Photodiode by Coupling of Two Planar Diodes

Zinc acetate dihydrate solution was deposited onto glass and a thin layer of aluminum (10 nm), by spray pyrolysis at 450 °C, growing zinc oxide (ZnO) thin films. The ZnO formation occurs differently on aluminum due to the diffusion process forming AZO at the Al/ZnO interface. The films deposited onto the aluminum showed transmittance above 95%, associated with sheet resistance less than 40 Ω/sq. The high transmittance value with low sheet resistance is crucial for a good transparent electrode. Raman spectroscopy showed a higher degree of doping for films with thin layers of ZnO, and that the diffusion process is high at the Al/ZnO interface. The performance of the transparent electrode was evaluated through the characterization of the Schottky diode (Al:ZnO/ZnO/Au). The factor of ideality (n), resistance in series (Rs), and height of the barrier (
 $$ \phi_{B} ) $$
 presented values of 3.79, 1022.6 Ω, and 0.97 eV, respectively. These results demonstrate the simple production of a transparent electrode by the in situ diffusion process using the spray pyrolysis technique.

AZO transparent electrodes grown in situ during the deposition of zinc acetate dihydrate onto aluminum thin film by spray pyrolysis

Influence of paper surface characteristics on fully inkjet printed PEDOT:PSS-based electrochemical transistors

Successful manufacture of a simple, low cost sprayed Schottky diode compatible with printed electronics using reduced graphene oxide (rGO) as a semi-transparent top electrode and zinc oxide (ZnO) as active layer has been reported in this paper. The rGO was synthesized using modified Hummers’ method and deposited by spray coating. The transmittance analyses of rGO films shows 62.3% transparency for ultraviolet (UV) light and by the Van der Pauw method shows sheet resistance of 19 kΩ/□. The rGO electrode provides an alternative to expensive metallic electrodes such as Au, Pt, Pd and Ag which are not ecofriendly. Furthermore, rGO performs Schottky contact with sprayed zinc oxide film resulting in a diode with the sequence of deposited layers Al/ZnO/rGO and low turn-on voltage that has current–voltage characteristics whose rectifying behavior is affected by the incidence of UV light resulting in a possibility to use that diode as photodetector for this kind of radiation.

D. Vieira

Papers

UV-photocurrent response of zinc oxide based devices: Application to ZnO/PEDOT:PSS hydrid Schottky diodes

Improvement of the Deep UV Sensor Performance of a β-Ga 2 O 3 Photodiode by Coupling of Two Planar Diodes

AZO transparent electrodes grown in situ during the deposition of zinc acetate dihydrate onto aluminum thin film by spray pyrolysis

Influence of paper surface characteristics on fully inkjet printed PEDOT:PSS-based electrochemical transistors

The Use of an rGO Semi-transparent Organic Electrode in a ZnO Schottky Diode for UV Detection