Dae Hong Ko

TL;DR: The thermal stability and structural characteristics for gate stack structure of HfO2 dielectrics deposited by atomic-layer deposition (ALD) were investigated in this article, where an interfacial layer of hafnium silicate with an amorphous structure was grown on the oxidized Si substrate at an initial growth stage.

TL;DR: The structural characteristics and the chemical state of a HfO2-Al2O3 nanolaminate structure, depending on the postannealing temperature, were examined by x-ray diffraction and X-ray photoelectron spectroscopy.

TL;DR: In this article, a simple technique to measure the elastic modulus and Poisson's ratio of diamond-1ike carbon (DLC) films deposited on Si substrate was suggested, which involved etching a side of Si substrate using the DLC film as an etching mask.

TL;DR: In this article, the authors investigated the tribological behavior of diamond-like carbon (DLC) films and Si incorporated DLC (Si-DLC), and found that high and unstable friction behavior was observed in both humid air and dry oxygen environments.

TL;DR: In this article, the thermal stability of HfO2 high-k gate dielectric on GaAs is investigated, and significant improvements in interfacial properties as well as electrical characteristics are found by constructing a Al2O3/HfO 2/Al2O 3/Al 2O3 dielectrics stack.