M
Mann Ho Cho
Researcher at Yonsei University
Publications - 274
Citations - 4683
Mann Ho Cho is an academic researcher from Yonsei University. The author has contributed to research in topics: Thin film & Atomic layer deposition. The author has an hindex of 32, co-authored 258 publications receiving 4136 citations. Previous affiliations of Mann Ho Cho include Samsung & Korea Research Institute of Standards and Science.
Papers
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Journal ArticleDOI
Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition
Mann Ho Cho,Y. S. Roh,C. N. Whang,K. Jeong,S. W. Nahm,Dae Hong Ko,Jinseon Lee,Nae-In Lee,K. Fujihara +8 more
TL;DR: The thermal stability and structural characteristics for gate stack structure of HfO2 dielectrics deposited by atomic-layer deposition (ALD) were investigated in this article, where an interfacial layer of hafnium silicate with an amorphous structure was grown on the oxidized Si substrate at an initial growth stage.
Journal ArticleDOI
Improved growth behavior of atomic-layer-deposited high-k dielectrics on multilayer MoS2 by oxygen plasma pretreatment.
TL;DR: The results indicate that the surface modification of MoS2 by oxygen plasma treatment can have a major impact on the subsequent deposition of high-k thin films, with important implications on their integration in thin film transistors.
Proceedings ArticleDOI
The breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor(RCAT) for 88 nm feature size and beyond
Joonsuk Kim,Chang-Sub Lee,S. Kim,I.B. Chung,Yong-lack Choi,Byung-lyul Park,J.W. Lee,D.I. Kim,Young-Nam Hwang,D.S. Hwang,H.K. Hwang,Jong Moon Park,D.H. Kim,N.J. Kang,Mann Ho Cho,Myung Yung Jeong,Hoonki Kim,Jung-In Han,S.Y. Kim,Byeong Yun Nam,Hyun-Mog Park,S.H. Chung,J. H. Lee,Jintaek Park,H.S. Kim,Yang-Keun Park,K. Kim +26 more
TL;DR: In this paper, a Recess-Channel-Array-Transistor (RCAT) with 88 nm feature size has been developed for DRAM with a gate length of 75 nm and channel depth of 150 nm.
Journal ArticleDOI
Interfacial characteristics of HfO2 grown on nitrided Ge (100) substrates by atomic-layer deposition
TL;DR: In this paper, the microstructural and electrical properties of Ge-based metal-oxide-semiconductor capacitors containing high-k gate dielectric layers were investigated with and without the presence of a GeOxNy interface layer.
Journal ArticleDOI
Dielectric characteristics of Al2O3–HfO2 nanolaminates on Si(100)
Mann Ho Cho,Y. S. Roh,C. N. Whang,K. Jeong,Haryeong Choi,Suheun Nam,Dae Hong Ko,Jinseon Lee,Nae-In Lee,K. Fujihara +9 more
TL;DR: The structural characteristics and the chemical state of a HfO2-Al2O3 nanolaminate structure, depending on the postannealing temperature, were examined by x-ray diffraction and X-ray photoelectron spectroscopy.