D
Damien Valente
Researcher at François Rabelais University
Publications - 29
Citations - 156
Damien Valente is an academic researcher from François Rabelais University. The author has contributed to research in topics: Silicon & Band-pass filter. The author has an hindex of 5, co-authored 23 publications receiving 106 citations. Previous affiliations of Damien Valente include Centre national de la recherche scientifique & University of Rennes.
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Journal ArticleDOI
Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies.
Micka Bah,Damien Valente,Marie Lesecq,Nicolas Defrance,Maxime Garcia Barros,Jean-Claude De Jaeger,Eric Frayssinet,Rémi Comyn,Thi Huong Ngo,Daniel Alquier,Yvon Cordier +10 more
TL;DR: This work highlights that this p-type channel can increase the propagation losses in the high-frequency devices but also that a memory effect associated with the previous sample growths with GaN can noticeably affect the physical properties in absence of proper reactor preparation.
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Three-State Microwave Tunable Resonator Integrating Several Active Elements on Silicon Technology in a Global Design
Rozenn Allanic,Denis Le Berre,Yves Quéré,Cédric Quendo,David Chouteau,Virginie Grimal,Damien Valente,Jerome Billoue +7 more
TL;DR: In this paper, a discrete tunable resonator with three different states controlled by a single dc source is presented, where the largest area switches from the reverse state (OFF state) to the forward state (ON1 state), with a lower bias voltage than that of the smallest area.
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Non-oxidized porous silicon-based power AC switch peripheries
TL;DR: It seems possible to benefit from the PS electrical insulation properties to ensure the OFF state of the device to isolate upper and lower junctions through the addition of a PS layer anodically etched from existing AC switch diffusion profiles.
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Systematic Study of Anodic Etching of Highly Doped N-type 4H-SiC in Various HF Based Electrolytes
Gaël Gautier,Jérôme Biscarrat,Jérôme Biscarrat,Damien Valente,Thomas Defforge,A. Gary,Frédéric Cayrel +6 more
TL;DR: In this paper, the electrochemical anodization of n-type heavily doped 4H-SiC wafers in HF-based electrolytes without any UV light assistance was studied.
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Role of Electrolyte Additives during Electrochemical Etching of Macropore Arrays in Low-Doped Silicon
TL;DR: In this paper, the role of several additives in electrolytic solution during silicon anodization was reported, and the morphologies of macroporous silicon arrays in low-doped n- or p-type silicon are strongly influenced by the chemical nature of these additives.