D
David J. P. Ellis
Researcher at Toshiba
Publications - 47
Citations - 828
David J. P. Ellis is an academic researcher from Toshiba. The author has contributed to research in topics: Quantum dot & Photon. The author has an hindex of 17, co-authored 46 publications receiving 764 citations.
Papers
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Journal ArticleDOI
Controlled-NOT gate operating with single photons
M. A. Pooley,David J. P. Ellis,Raj B. Patel,Anthony J. Bennett,K. H. A. Chan,Ian Farrer,David A. Ritchie,Andrew J. Shields +7 more
TL;DR: In this paper, the authors demonstrate a two qubit gate using indistinguishable photons from a quantum dot in a pillar microcavity, which is a promising approach towards creating a fully integrated device for scalable quantum computing.
Journal ArticleDOI
Cavity-enhanced coherent light scattering from a quantum dot.
Anthony J. Bennett,J. P. Lee,J. P. Lee,David J. P. Ellis,Thomas Meany,E. Murray,E. Murray,Frederik F. Floether,Frederik F. Floether,Jonathan P. Griffths,Ian Farrer,David A. Ritchie,Andrew J. Shields +12 more
TL;DR: A microcavity enhances the efficiency of resonant photon scattering, generating pure indistinguishable single photons, and deterministic excitation is used to create two-photon N00N states with which to make superresolving phase measurements in a photonic circuit.
Journal ArticleDOI
Cavity-enhanced radiative emission rate in a single-photon-emitting diode operating at 0.5?GHz
David J. P. Ellis,Anthony J. Bennett,Samuel J. Dewhurst,Samuel J. Dewhurst,Christine A. Nicoll,David A. Ritchie,Andrew J. Shields +6 more
TL;DR: In this paper, a single photon electroluminescence was demonstrated at repetition rates up to 0.5 GHz using an annulus of low-refractive-index aluminium oxide, formed by wet oxidation.
Journal ArticleDOI
Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates.
Joanna Skiba-Szymanska,Ayesha Jamil,Ian Farrer,Martin B. Ward,Christine A. Nicoll,David J. P. Ellis,J. Griffiths,Dustin Anderson,G. A. C. Jones,David A. Ritchie,Andrew J. Shields +10 more
TL;DR: Photoluminescence measurements on a single layer of site-controlled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on pre-patterned GaAs(100) substrates with a 15 nm re-growth buffer separating the dots from the re- growth interface show stable emission wavelengths, which indicates the absence of a fluctuating charge background in the sample and confirms the cleanliness of theRe-growth interface.
Journal ArticleDOI
Quantum photonics hybrid integration platform
E. Murray,E. Murray,David J. P. Ellis,Thomas Meany,Frederik F. Floether,Frederik F. Floether,J. P. Lee,J. P. Lee,J. Griffiths,Gac Jones,Ian Farrer,David A. Ritchie,Anthony J. Bennett,Andrew J. Shields +13 more
TL;DR: In this paper, a hybrid integration platform consisting of arbitrarily designed waveguide circuits and single-photon sources was demonstrated. But the authors did not specify the number of channels to be accessed.