Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.

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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.

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Single-layer MoS2 transistors

Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 10(5) and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to ∼ 1,000 cm(2) V(-1) s(-1) obtained for a thickness of ∼ 10 nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.

Black phosphorus field-effect transistors

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

We provide a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures. A salient feature of our review is a critical comparison between carrier transport in graphene and in two-dimensional semiconductor systems (e.g. heterostructures, quantum wells, inversion layers) so that the unique features of graphene electronic properties arising from its gap- less, massless, chiral Dirac spectrum are highlighted. Experiment and theory as well as quantum and semi-classical transport are discussed in a synergistic manner in order to provide a unified and comprehensive perspective. Although the emphasis of the review is on those aspects of graphene transport where reasonable consensus exists in the literature, open questions are discussed as well. Various physical mechanisms controlling transport are described in depth including long- range charged impurity scattering, screening, short-range defect scattering, phonon scattering, many-body effects, Klein tunneling, minimum conductivity at the Dirac point, electron-hole puddle formation, p-n junctions, localization, percolation, quantum-classical crossover, midgap states, quantum Hall effects, and other phenomena.

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Electronic transport in two-dimensional graphene

Spectral characteristics of conductance fluctuations in ballistic quantum dots: The influence of finite magnetic field and temperature.

Electricity plays a special role in our lives and life. Equations of electron dynamics are nearly exact and apply from nuclear particles to stars. These Maxwell equations include a special term the displacement current (of vacuum). Displacement current allows electrical signals to propagate through space. Displacement current guarantees that current is exactly conserved from inside atoms to between stars, as long as current is defined as Maxwell did, as the entire source of the curl of the magnetic field. We show how the Bohm formulation of quantum mechanics allows easy definition of current. We show how conservation of current can be derived without mention of the polarization or dielectric properties of matter. Matter does not behave the way physicists of the 1800's thought it does with a single dielectric constant, a real positive number independent of everything. Charge moves in enormously complicated ways that cannot be described in that way, when studied on time scales important today for electronic technology and molecular biology. Life occurs in ionic solutions in which charge moves in response to forces not mentioned or described in the Maxwell equations, like convection and diffusion. Classical derivations of conservation of current involve classical treatments of dielectrics and polarization in nearly every textbook. Because real dielectrics do not behave in a classical way, classical derivations of conservation of current are often distrusted or even ignored. We show that current is conserved exactly in any material no matter how complex the dielectric, polarization or conduction currents are. We believe models, simulations, and computations should conserve current on all scales, as accurately as possible, because physics conserves current that way. We believe models will be much more successful if they conserve current at every level of resolution, the way physics does.

Dynamics of Current, Charge and Mass

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Collision-duration time for optical-phonon emission in semiconductors

Quantum wave processing

In Chapter 2, we introduced the idea of low-dimensional systems arising from quantum confinement. Such confinement may be due to a heterojunction, an oxide-semiconductor interface, or simply a semiconductor-air interface (for example, in an etched quantum wire structure). When we look at transport parallel to such barriers, such as along the channel of a HEMT or MOSFET, or along the axis of a quantum wire, to a large extent we can employ the usual kinetic equation formalisms for transport and ignore the phase information of the particles. Quantum effects enter only through the description of the basis states arising from the confinement, and the quantum mechanical transition rates between these states are due to the scattering potential. This is not to say that quantum interference effects do not play a role in parallel transport. As we will see in Chapters 5 and 6, several effects manifest themselves in parallel transport studies such as weak localization and universal conductance fluctuations , which at their origin have effects due to the coherent interaction of electrons. In contrast to transport parallel to barriers, when particles traverse regions in which the medium is changing on length scales comparable to the phase coherence length of the particles, quantum interference is expected to be important. By “quantum interference” we mean the superposition of incident and reflected waves, which, in analogy to the electromagnetic case, leads to constructive and destructive interference. Such a coherent superposition of states is of course what leads to the quantization of momentum and energy in the formation of low-dimensional systems discussed in the previous chapter.

David K. Ferry

Papers

Spectral characteristics of conductance fluctuations in ballistic quantum dots: The influence of finite magnetic field and temperature.

Dynamics of Current, Charge and Mass

Collision-duration time for optical-phonon emission in semiconductors

Quantum wave processing

Transport in Nanostructures: Transmission in nanostructures