D
David K. Ferry
Researcher at Arizona State University
Publications - 856
Citations - 16742
David K. Ferry is an academic researcher from Arizona State University. The author has contributed to research in topics: Quantum dot & Monte Carlo method. The author has an hindex of 55, co-authored 844 publications receiving 16013 citations. Previous affiliations of David K. Ferry include Colorado State University & Chiba University.
Papers
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Journal ArticleDOI
Classical and quantum dynamics in an array of electron billiards
TL;DR: In this paper, the authors investigate the classical and quantum dynamics in an array of electron billiards within a magnetic field and show that the resulting modification of the phase space due to the magnetic field can be directly related to the experimentally observed magneto-resistance.
Book ChapterDOI
Magneto-Transport as a Probe of Electron Dynamics in Open Quantum Dots
TL;DR: In this article, the authors used magneto-transport studies to probe electron dynamics in open quantum dots, which are quasi-zero-dimensional semiconductor structures in which electrical current flow is confined on length scales that approach the size of the electron itself.
Book ChapterDOI
Cellular Monte Carlo Modeling of AlxIn1−xSb/InSb Quantum Well Transistors
J. Branlard,Nicolas Faralli,T. Dutta-Roy,S. M. Goodnick,David K. Ferry,Shela Aboud,Marco Saraniti +6 more
TL;DR: In this paper, an Indium Antimonide (InSb) quantum well transistor is investigated using full-band Monte Carlo simulations, showing particle transport along the 2DEG.
Journal ArticleDOI
Transport study of ultra-thin SOI MOSFETs
B. Naser,Kyoungah Cho,Sungwoo Hwang,Sungwoo Hwang,Jonathan P. Bird,David K. Ferry,Stephen M. Goodnick,Byung-Gook Park,Doyeol Ahn +8 more
TL;DR: In this paper, the authors present the results of detailed transport measurements on a silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) in a wide range of temperature (T, 4.2 K ).
Proceedings ArticleDOI
Ultra-small MOSFETs: the importance of the full Coulomb interaction on device characteristics
TL;DR: In this article, the Coulomb interaction in an ultrasmall MOSFET is treated by a coupled EMC and molecular dynamics (MD) procedure to treat Coulomb interactions in real space.