David Van Steenwinckel

TL;DR: In this article, the acid diffusion length and exposure latitude of photoresists at different process conditions are characterized using a lithographic technique, and the observed tendencies are correlated with trends in exposure latitude, resolution and the frequency spectrum of line edge roughness.

TL;DR: In this article, a method of forming a pattern in at least one device layer in or on a substrate comprises: coating the device layer with a first photoresist layer, exposing the first mask using a first mask, developing the first pattern on the substrate, coating the substrate with a protection layer, treating the protection layer to cause a change therein where it is in contact with the first photoressist, to render the changed protection layer substantially immune to a subsequent exposure and / or developing step.

TL;DR: In this article, the impact of resist parameters such as acid diffusion and quencher level on the lithographic performance of 14 extreme ultraviolet (EUV) resists on the 0.3 numerical aperture EUV Micro Exposure Tool at the Advanced Light Source at Lawrence Berkeley National Laboratories is investigated.

TL;DR: In this article, a calibration circuit, computer program product, and method of calibrating a junction temperature measurement of a semiconductor element is presented, wherein respective forward voltages at junctions of the semiconductor elements and a reference temperature sensor are measured, and an absolute ambient temperature is determined by using the reference temperature sensors.

TL;DR: In this article, an experimental method to determine the resist parameters that are at the origin of general blurring of the projected aerial image is presented, including the effects of diffusion in the horizontal plane and a second cause for image blur that originates from a stochastic variation of the focus parameter.