Deblina Sarkar

TL;DR: The design and first demonstration of high-performance n-type monolayer tungsten diselenide (WSe2) field effect transistors (FET) by selecting the contact metal based on understanding the physics of contact between metal and monolayers WSe2 corroborates the superb potential of WSe 2 for complementary digital logic applications.

TL;DR: This paper introduces and demonstrates FET biosensors based on molybdenum disulfide (MoS2), which provides extremely high sensitivity and at the same time offers easy patternability and device fabrication, due to its 2D atomically layered structure.

TL;DR: This paper demonstrates band-to-band tunnel field-effect transistors (tunnel-FETs), based on a two-dimensional semiconductor, that exhibit steep turn-on and is the only planar architecture tunnel-fET to achieve subthermionic subthreshold swing over four decades of drain current, and is also the only tunnel- FET (in any architecture) to achieve this at a low power-supply voltage of 0.1 volts.

TL;DR: In this article, a new class of semiconductors, monolayer transition-metal dichalcogenides, is proposed to improve the performance of a device's transceivers.

TL;DR: The experimental investigation of the doping effect on TMDs is presented, mainly focusing on molybdenum disulfide (MoS2), by metallic nanoparticles (NPs), exploring noble metals such as silver, palladium, and platinum as well as the low workfunction metals for the first time.