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Deepak Bharti

Researcher at Indian Institute of Technology, Jodhpur

Publications -  38
Citations -  388

Deepak Bharti is an academic researcher from Indian Institute of Technology, Jodhpur. The author has contributed to research in topics: Pentacene & Field-effect transistor. The author has an hindex of 9, co-authored 36 publications receiving 237 citations. Previous affiliations of Deepak Bharti include Malaviya National Institute of Technology, Jaipur & Birla Institute of Technology and Science.

Papers
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Journal ArticleDOI

Investigation of resistive switching in PVP and ultra-thin HfOx based bilayer hybrid RRAM

TL;DR: Hybrid CBRAM devices based on PVP/HfOx bilayer were investigated for their switching performance in this paper, where the pinholes formation in PVP layer guides the confined growth and dissolution of Ag conductive filament (CF) in the bilayer structure.
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Influence of molecular weight of polymer dielectric on the photo-response of solution-processed OFETs

TL;DR: In this paper, the crucial role of molecular weight of the polymer dielectric in regulating the electrical performance and photo-response of TIPS-pentacene OFETs has been explored using poly(vinyl alcohol) (PVA) as the polymer layer.
Proceedings ArticleDOI

Improved properties of MIM capacitors using ALD Al2O3 by multi-temperature technique

TL;DR: In this paper, a multi-temperature dielectric stack in metal-insulator-metal capacitors is proposed, where the middle layer is deposited at a higher temperature than the top and bottom layers.
Proceedings ArticleDOI

Performance enhancement in TIPS-pentacene:PS blend organic field effect transistors by solvent vapor annealing

TL;DR: In this article, the authors used solvent vapor annealing (SVA) to further ameliorate the degree of crystalline order in the active layer of an organic field effect transistors.
Journal ArticleDOI

Performance Investigation of Organic Thin Film Transistor on Varying Thickness of Semiconductor Material: An Experimentally Verified Simulation Study

TL;DR: In this paper, the authors performed two-dimensional numerical simulations to analyze the device characteristics of triisopropylsilylethynyl (TIPS)-pentacene organic thin-film transistor (OTFT) fabricated using drop-casting technique.