D
Deepak Bharti
Researcher at Indian Institute of Technology, Jodhpur
Publications - 38
Citations - 388
Deepak Bharti is an academic researcher from Indian Institute of Technology, Jodhpur. The author has contributed to research in topics: Pentacene & Field-effect transistor. The author has an hindex of 9, co-authored 36 publications receiving 237 citations. Previous affiliations of Deepak Bharti include Malaviya National Institute of Technology, Jaipur & Birla Institute of Technology and Science.
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Operationally Stable Organic FETs With Bilayer Dielectrics on Low-Cost Flexible Polyimide Substrate
TL;DR: In this paper, organic FETs with bilayer dielectric poly(4-vinylphenol) and polyvinyl alcohol (PVA)/HfO2 were fabricated on a flexible low-cost Kapton tape substrate with TIPS -pentacene:polystyrene as an active layer.
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Photo-Response of Low Voltage Flexible TIPS-Pentacene Organic Field-Effect Transistors
TL;DR: In this paper, photo-response of solution processed flexible TIPS-pentacene organic field effect transistors is evaluated under illumination with visible light of red, green, and blue colors having minimum wavelengths of 620, 520, and 460 nm.
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Effect of UV irradiation on solution processed low voltage flexible organic field-effect transistors
TL;DR: In this article, the effect of ultra-violet (UV) irradiation on the electrical characteristics of solution processed flexible TIPS-pentacene organic field effect transistors (OFETs) has been investigated.
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TIPS-pentacene/Copper (II) phthalocyanine bi-layer photo sensitive organic field-effect transistors
Ajay Kumar Mahato,Vivek Raghuwanshi,Deepak Bharti,Ishan Varun,Narottam Prasad,Mahesh Saran Roy,Shree Prakash Tiwari +6 more
TL;DR: In this article, a combination of a thin layer of copper (II) phthalocyanine (CuPc) and TIPS-pentacene crystal was used to enhance the photo-sensing spectrum of photo-sensitive organic field effect transistors (photo-OFETs).
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Multi-temperature deposition scheme for improved resistive switching behavior of Ti/AlOx/Ti MIM structure
TL;DR: In this article, a 40-nm AlO x-based resistive random access memory was fabricated with a new multi-temperature deposition (MTD) scheme, where a 40nm thick AlOx film was deposited with temperature-thickness sequence of 150°C (10nm)/80 −C (20 −nm)/150 −C(10 −nm), and the conduction mechanism has been explained as ohmic and space charge limited conduction at lower and higher voltages respectively.