Showing papers by "Deren Yang published in 2002"
TL;DR: In this paper, the directional growth of CdS nanowires is verified by scanning electron microscopy and high-resolution TEM images of the lattice images of {0 0 2}, {1 0 1} and { 1 0 0} planes.
80 citations
TL;DR: In this article, the formation of grown-in oxygen precipitates in NCZ silicon can be divided into two stages, and the large precipitates are generated around 1150°C, while the small precipitates should be enhanced by NmOn complexes at 750°C and below.
Abstract: Grown-in defects including oxygen precipitates and voids in nitrogen-doped Czochralski (NCZ) silicon have been investigated. It was found that the formation of grown-in oxygen precipitates in NCZ silicon can be divided into two stages. The large precipitates supposed to be enhanced by N2–V2–Ox complexes are generated around 1150 °C, while the small precipitates supposed to be enhanced by NmOn complexes are formed at 750 °C and below. Moreover, it was revealed that the oxygen precipitation behavior in the mixed-type NCZ silicon, which contains vacancy-type and interstitial-type defects distinguished by an OSF-ring in the oxidized wafer, is in sharp contrast to that in the mixed-type Czochralski (CZ) silicon, when subjected to one-step high temperature annealing (1050 °C/32 h) and two-step annealing (800 °C/4 h+1050 °C/16 h). On the other hand, it was found that, compared with CZ silicon, NCZ silicon has much denser crystal originated particles in smaller sizes, which were verified to have been annihilated ...
79 citations
TL;DR: The effect of germanium (Ge) on void defects in lightly Ge-doped Czochralski (GCZ) silicon (Si) crystals has been investigated in this article.
45 citations
TL;DR: In this article, the authors used a simple sol-gel process and nano-channel alumina (NCA) for the preparation of nanowires of other mono-component or multi-component oxides.
42 citations
TL;DR: In this article, the effect of nitrogen on the optical properties of dislocations in nitrogen-doped Czochralski and float zone silicon samples where the nitrogen doping was carried out by adding Si3N4 in the molten silicon charge or by nitrogen gas dissolution.
Abstract: This paper reports the results of a study of the effect of nitrogen on the optical properties of dislocations in nitrogen-doped Czochralski and nitrogen-doped float zone silicon samples where the nitrogen doping was carried out by adding Si3N4 in the molten silicon charge or by nitrogen gas dissolution. Dislocations were introduced by plastic deformation at 650?C. In nitrogen-doped plastically deformed samples, emissions in the range of the D1?D4 bands of dislocations are present with a significant shifting from the energies and intensities of the corresponding bands in nitrogen-free samples. It has been shown that the main effect of nitrogen could be the enhancement of the oxygen precipitation. The results confirm the suggestion of some of the present authors that luminescence at 0.830 eV is associated with some intrinsic properties of oxygen precipitates.
24 citations
TL;DR: In this paper, the effect of heat treatment on carbon in cast multicrystalline silicon (mc-Si) has been studied by means of Fourier Transmission Infrared Spectroscopy.
14 citations
TL;DR: In this article, the annealing behavior of oxygen in the CZ silicon used for solar cells was investigated by means of FTIR and SEM, and it was found that the oxygen concentration in S-CZ Si crystal was lower than in the M-Cz Si crystal.
9 citations
TL;DR: The impact of nitrogen in Czochralski (CZ) silicon on the characteristics of power diodes has been studied in this paper, where it was found that more oxygen precipitates and higher density of dislocations were generated in the dioded produced by NCZ silicon, especially with high oxygen concentration.
Abstract: The impact of nitrogen in Czochralski (CZ) silicon on the characteristics of power diodes has been studied. The nitrogen doped CZ silicon (NCZ) grown in a nitrogen atmosphere was used for manufacturing diodes. For comparison, the common CZ silicon (ACZ) grown in an argon ambient with almost the same oxygen concentration and thermal history was also used. It was found that more oxygen precipitates and higher density of dislocations were generated in the diodes produced by NCZ silicon, especially with high oxygen concentration. The reverse breakdown voltages (Vr) and the times of reverse recovery (Trr) of the diodes produced by NCZ silicon with higher oxygen concentration were slightly lower. However, Vr and Trr of the diodes produced from NCZ silicon with lower oxygen concentration were almost the same as those from CZ silicon. It can be speculated that nitrogen decreases the Trr and Vr of diodes through the enhancement of the formation of oxygen precipitates and dislocations, if the oxygen concentration in silicon is high (>1018 cm−3).
2 citations