D
Dongsheng Li
Researcher at Zhejiang University
Publications - 180
Citations - 3637
Dongsheng Li is an academic researcher from Zhejiang University. The author has contributed to research in topics: Silicon & Photoluminescence. The author has an hindex of 27, co-authored 174 publications receiving 3188 citations. Previous affiliations of Dongsheng Li include Shizuoka University & Zhejiang Sci-Tech University.
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Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy
TL;DR: In this article, the performance of non-oped GaN films with the polar surface in KOH solution has been investigated and it is confirmed that the continuous etching in Koh solution takes place only for the GaN film with N-face (−c) polarity independent of the deposition method and growth condition.
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Plasmonic Silicon Quantum Dots Enabled High-Sensitivity Ultrabroadband Photodetection of Graphene-Based Hybrid Phototransistors
Zhenyi Ni,Ma Lingling,Sichao Du,Yang Xu,Meng Yuan,Hehai Fang,Zhen Wang,Mingsheng Xu,Dongsheng Li,Jianyi Yang,Weida Hu,Xiaodong Pi,Deren Yang +12 more
TL;DR: This work demonstrates the highly sensitive MIR photodetection of QD/graphene hybrid phototransistors by using plasmonic silicon (Si) QDs doped with boron (B), and the resulting UV-to-MIR ultrabroadband photodetic features ultrahigh responsivity, gain, and specific detectivity.
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Enhancement of ZnO light emission via coupling with localized surface plasmon of Ag island film
TL;DR: In this article, the authors observed that the light emission of ZnO films can be enhanced by coupling through localized surface plasmons, which is mainly dependent on the sputtering time of the Ag islands.
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Photoluminescence of Si-rich silicon nitride: Defect-related states and silicon nanoclusters
TL;DR: In this paper, photoluminescence from defect-related states and Si nanoclusters was observed in Si-rich silicon nitride films simultaneously, and the results demonstrate that the luminescence was selected by the excitation energy.
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Electrically pumped ZnO film ultraviolet random lasers on silicon substrate
TL;DR: In this article, an electrically pumped ultraviolet (UV) random lasing in c-axis oriented ZnO polycrystalline films has been demonstrated, where a metal-oxide-semiconductor structure of Au∕SiOx(x < 2)∕ZnO film was fabricated on a silicon substrate.