Showing papers by "Deyu Li published in 2000"
TL;DR: In this article, the authors used the molecular dynamics computational technique to investigate the thermal conductivity of solid thin films in the direction perpendicular to the film plane and found that the calculated values are roughly 30 percent higher than anticipated.
Abstract: This study uses the molecular dynamics computational technique to investigate the thermal conductivity of solid thin films in the direction perpendicular to the film plane. In order to establish a benchmark reference, the computations are based on the widely used Lennard-Jones argon model due to its agreement with experimental liquid-phase data, its physically meaningful parameters, and its simple two-body form. Thermal conductivity increases with film thickness, as expected from thin-film experimental data and theoretical predictions. The calculated values are roughly 30 percent higher than anticipated. Varying the boundary conditions, heat flux, and lateral dimensions of the films causes no observable change in the thermal conductivity values. The present study also delineates the conditions necessary for meaningful thermal conductivity calculations and offers recommendations for efficient simulations. This work shows that molecular dynamics, applied under the correct conditions, is a viable tool for calculating the thermal conductivity of solid thin films. More generally, it demonstrates the potential of molecular dynamics for ascertaining microscale thermophysical properties in complex structures.
173 citations
TL;DR: In this article, the effect of crystal cut errors on ion-implanted impurity profiles in silicon is examined, and the results are compared with SIMS experimental data, showing the importance of taking crystal cut error into account in the comparison of measured and simulated impurity profile, and in evaluating, calibrating, and comparing ion implant tools.
Abstract: In this paper, the effect of crystal cut error on ion-implanted impurity profiles in silicon is examined. Accurate measurements of crystal cut errors have been performed using the X-ray diffraction method, and a method of calculating the effect of crystal cut error on the implant tilt/rotation angle is provided. The subsequent effect of crystal cut error on ion-implanted profiles is simulated, and the results are compared with SIMS experimental data. The comparison shows the validity of the crystal cut error calculation outlined in this paper, and the importance of taking crystal cut error into account in the comparison of measured and simulated impurity profiles, and in evaluating, calibrating, and comparing ion implant tools.
6 citations