D
Dimitris Pavlidis
Researcher at University of Michigan
Publications - 285
Citations - 3993
Dimitris Pavlidis is an academic researcher from University of Michigan. The author has contributed to research in topics: High-electron-mobility transistor & Heterojunction bipolar transistor. The author has an hindex of 33, co-authored 282 publications receiving 3898 citations. Previous affiliations of Dimitris Pavlidis include Technical University of Moldova & Technische Universität Darmstadt.
Papers
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Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data
D.R. Pehlke,Dimitris Pavlidis +1 more
TL;DR: In this article, a parameter extraction formalism for the evaluation of heterojunction bipolar transistor (HBT) device physics is presented, which uses analytically derived expressions for direct calculation of the HBT T-model equivalent circuit element values in terms of the measured S-parameters.
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Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition
Tamotsu Hashizume,Tamotsu Hashizume,Egor Alekseev,Dimitris Pavlidis,Karim S. Boutros,Joan M. Redwing +5 more
TL;DR: In this paper, the high-frequency capacitance-voltage (C-V) characteristics showed clear deep-depletion behavior at room temperature, and the doping density derived from the slope of 1/C2 plots under the deep depletion condition agreed well with the growth design parameters.
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Large-signal microwave performance of GaN-based NDR diode oscillators
Egor Alekseev,Dimitris Pavlidis +1 more
TL;DR: In this paper, the GaN material parameters relevant to the negative diAerential resistance (NDR) devices are discussed, and their physical models based on the theoretical predictions and experimental device characteristics are introduced.
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Improved quality GaN by growth on compliant silicon-on-insulator substrates using metalorganic chemical vapor deposition
TL;DR: The use of compliant silicon-on-insulator (SOI) substrates instead of Si substrates is shown to improve the quality of epitaxial GaN layers by releasing the strain and absorbing the generated threading dislocations in the thin Si overlay of the SOI substrate as mentioned in this paper.
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Ga/sub 0.51/In/sub 0.49/P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures
TL;DR: In this paper, the DC and microwave characteristics of Ga/sub 0.51/In/sub sub 0.49/P/GaAs HEMTs grown by metalorganic chemical vapor deposition (MOCVD) are presented.