A large amount of work world-wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si. Much progress has been made following the demonstration in 1990 that highly porous material could emit very efficient visible photoluminescence at room temperature. Since that time, all features of the structural, optical and electronic properties of the material have been subjected to in-depth scrutiny. It is the purpose of the present review to survey the work which has been carried out and to detail the level of understanding which has been attained. The key importance of crystalline Si nanostructures in determining the behaviour of porous Si is highlighted. The fabrication of solid-state electroluminescent devices is a prominent goal of many studies and the impressive progress in this area is described.

The structural and luminescence properties of porous silicon

Carbon nanodots (C-dots) have generated enormous excitement because of their superiority in water solubility, chemical inertness, low toxicity, ease of functionalization and resistance to photobleaching. In this review, by introducing the synthesis and photo- and electron-properties of C-dots, we hope to provide further insight into their controversial emission origin (particularly the upconverted photoluminescence) and to stimulate further research into their potential applications, especially in photocatalysis, energy conversion, optoelectronics, and sensing.

Carbon nanodots: synthesis, properties and applications

Adding optical functionality to a silicon microelectronic chip is one of the most challenging problems of materials research. Silicon is an indirect-bandgap semiconductor and so is an inefficient emitter of light. For this reason, integration of optically functional elements with silicon microelectronic circuitry has largely been achieved through the use of direct-bandgap compound semiconductors. For optoelectronic applications, the key device is the light source--a laser. Compound semiconductor lasers exploit low-dimensional electronic systems, such as quantum wells and quantum dots, as the active optical amplifying medium. Here we demonstrate that light amplification is possible using silicon itself, in the form of quantum dots dispersed in a silicon dioxide matrix. Net optical gain is seen in both waveguide and transmission configurations, with the material gain being of the same order as that of direct-bandgap quantum dots. We explain the observations using a model based on population inversion of radiative states associated with the Si/SiO2 interface. These findings open a route to the fabrication of a silicon laser.

Optical gain in silicon nanocrystals

This Review article summarizes the key advantages of using quantum dots (QDs) as luminophores in light-emitting devices (LEDs) and outlines the operating mechanisms of four types of QD-LED. The key scientific and technological challenges facing QD-LED commercialization are identified, together with on-going strategies to overcome these challenges.

Emergence of colloidal quantum-dot light-emitting technologies

Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The p...

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Luminescence properties of defects in GaN

Optical Properties of Si Nanocrystals

We show that light emission from different systems of silicon nanocrystals does behave as expected for indirect-band-gap quantum dots. Photoluminescence excited on the low energy part of the distribution of Si nanocrystals exhibits a set of narrow peaks associated with Si TA and TO momentum-conserving phonon-assisted optical transitions. These spectra allow us to determine the ratio of no-phonon transitions to TA and TO phonon-assisted processes over a wide range of confinement energies. The ratio between these recombination channels changes by 2 orders of magnitude with increasing confinement energy. For confinement energies above 0.7 eV the radiative transitions are governed by no-phonon quasidirect processes.

Breakdown of the k -Conservation Rule in Si Nanocrystals

The spontaneous formation of organized nanocrystals in semiconductors has been observed1,2,3,4,5 during heteroepitaxial growth and chemical synthesis. The ability to fabricate size-controlled silicon nanocrystals encapsulated by insulating SiO2 would be of significant interest to the microelectronics industry. But reproducible manufacture of such crystals is hampered by the amorphous nature of SiO2 and the differing thermal expansion coefficients of the two materials. Previous attempts6,7,8,9,10 to fabricate Si nanocrystals failed to achieve control over their shape and crystallographic orientation, the latter property being important in systems such as Si quantum dots. Here we report the self-organization of Si nanocrystals larger than 80 A into brick-shaped crystallites oriented along the 〈111〉 crystallographic direction. The nanocrystals are formed by the solid-phase crystallization of nanometre-thick layers of amorphous Si confined between SiO2 layers. The shape and orientation of the crystallites results in relatively narrow photoluminescence, whereas isotropic particles produce qualitatively different, broad light emission. Our results should aid the development of maskless, reproducible Si nanofabrication techniques.

Ordering and Self-organization in Nanocrystalline Silicon

Photoluminescence, time-integrated, time-resolved, and photoluminescence excitation spectroscopy have been employed to study the 2.2 eV (``yellow'') emission in undoped GaN epitaxial layers. It is best described by a recombination model involving shallow donors and deep donors of probably intrinsic origin. Optically detected magnetic resonance reveals the participation of the shallow donor based on the analysis of the g value and Lorentzian line shape.

Properties of the yellow luminescence in undoped GaN epitaxial layers

Molecular oxygen plays an important role in many of the chemical reactions involved in the synthesis of biological life. In this review, we explore the interaction between O 2 and silicon nanocrystals, which can be employed in the photosynthesis of singlet oxygen. We demonstrate that nanoscale Si has entirely new properties owing to morphological and quantum size effects, i.e., large accessible surface areas and excitons of variable energies and with well-defined spin structures. These features result in new emerging functionality for nanoscale silicon: it is a very efficient spin-flip activator of O 2 , and therefore, a chemically and biologically active material. This whole effect is based on energy transfer from long-lived electronic excitations confined in Si nanocrystals to surrounding O 2 via the exchange of single electrons of opposite spin, thus enabling the spin-flip activation of O 2 . Further, we discuss the implications of these findings for physics, chemistry, biology, and medicine.

Dmitri Kovalev

Papers

Optical Properties of Si Nanocrystals

Breakdown of the k -Conservation Rule in Si Nanocrystals

Ordering and Self-organization in Nanocrystalline Silicon

Properties of the yellow luminescence in undoped GaN epitaxial layers

Silicon Nanocrystals: Photosensitizers for Oxygen Molecules