D
David J. Lockwood
Researcher at National Research Council
Publications - 400
Citations - 10075
David J. Lockwood is an academic researcher from National Research Council. The author has contributed to research in topics: Raman spectroscopy & Raman scattering. The author has an hindex of 48, co-authored 399 publications receiving 9465 citations. Previous affiliations of David J. Lockwood include Molecular Sciences Institute.
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Nickel hydroxides and related materials: a review of their structures, synthesis and properties.
TL;DR: This review article summarizes the last few decades of research on nickel hydroxide, an important material in physics and chemistry, that has many applications in engineering including, significantly, batteries.
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Quantum confinement and light emission in SiO2/Si superlattices
TL;DR: In this paper, molecular-beam epitaxy is used to construct well-defined superlattices of silicon and SiO2 which emit visible light through photoluminescence.
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Quantum confined luminescence in Si/SiO2 superlattices.
TL;DR: In this paper, photoluminescence was observed at wavelengths across the visible range for Si layer thicknesses with the fitted peak emission energy, which was in accordance with effective mass theory for quantum confinement by the wide gap and also with the bulk amorphous Si band gap.
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Raman and Infrared Spectroscopy of α and β Phases of Thin Nickel Hydroxide Films Electrochemically Formed on Nickel
David S. Hall,David J. Lockwood,Shawn Poirier,Christina Bock,Barry MacDougall,Barry MacDougall +5 more
TL;DR: Methods to measure the phase, or phases, and disorder at a Ni(OH)(2) sample surface and to correlate desired chemical properties to their structural origins are established and unifies the large body of literature on the topic.
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Nanocrystalline-silicon superlattice produced by controlled recrystallization
Leonid Tsybeskov,Karl D. Hirschman,Siddhartha P. Duttagupta,Margit Zacharias,Philippe M. Fauchet,John P. McCaffrey,David J. Lockwood +6 more
TL;DR: In this paper, the size of the Si nanocrystals is limited by the thickness of the a-Si layer, the shape is nearly spherical, and the orientation is random.