D
Donald L. Wollesen
Researcher at Advanced Micro Devices
Publications - 46
Citations - 1470
Donald L. Wollesen is an academic researcher from Advanced Micro Devices. The author has contributed to research in topics: Gate oxide & Trench. The author has an hindex of 24, co-authored 46 publications receiving 1468 citations.
Papers
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Patent
Short channel self-aligned VMOS field effect transistor
Donald L. Wollesen,Homi Fatemi +1 more
TL;DR: In this paper, a field effect transistor with a trench or groove gate having V-shaped walls is formed in a semiconductor substrate and a gate oxide is grown on the Vshaped walls to the surface of substrate and filled with a gate electrode material, such as polysilicon.
Patent
High conductivity interconnection line
TL;DR: High conductivity interconnection lines are formed of high conductivity material, such as copper, employing barrier layers impervious to the diffusion of copper atoms as discussed by the authors, and higher operating speeds are obtained with conductive interconnection line, preferably copper interconnection, formed above the wire bonding layer.
Patent
Trench-gated vertical combination JFET and MOSFET devices
TL;DR: In this article, a combination vertical MOSFET and JFET device is formed in a mesa (20,24) of semiconductor material by implanting the semiconductor layer, prior to top gate formation, such that the buried gate region is laterally coextensive with the mesa.
Patent
Silicon oxide insulator (SOI) semiconductor having selectively linked body
TL;DR: In this article, a silicon oxide insulator (SOI) device includes an SOI layer supported on a silicon substrate, and the body region is characterized by a first conductivity type.
Journal ArticleDOI
Predicting CMOS speed with gate oxide and voltage scaling and interconnect loading effects
TL;DR: In this article, the optimal gate oxide thickness for different interconnect loading was analyzed at supply voltages of 1.5-3.3 V. I/sub dsat/ can be accurately predicted from a universal mobility model and a current model considering velocity saturation and parasitic series resistance.