Techniques and apparatuses for identifying weak charge pumps and for setting an optimal clock period for charge pumps to minimize variations in a current-voltage characteristic. A current sink which absorbs a specified current is connected to an output node of a charge pump. In one approach, a success or fail status is set for a charge pump by driving it with a specified clock period in a constantly pumping mode and determining if the output voltage reaches a specified output voltage. In another approach, a success or fail status is set for a charge pump by driving it with a specified clock period in a regulation mode and determining if the period in which the output voltage cycles is a specified multiple, e.g., 2×, of a period of the clock signal. In another approach, an optimal clock period is determined.

Charge pump strength calibration and screening in circuit design

A multi voltage sensor system includes one or more charge pumps, a sensor bridge and readout circuitry. The one or more charge pumps are configured to provide a high voltage. The sensor bridge is biased by the high voltage and is configured to provide sensor values. The readout circuitry includes only low voltage components. The readout circuitry is configured to receive the sensor values.

Systems and methods for high voltage bridge bias generation and low voltage readout circuitry

A circuit includes a first resistive element having a first terminal coupled to an input node to receive a negative voltage, a second resistive element having a first terminal coupled to a first power supply terminal, and a third resistive element having a first terminal coupled to the first power supply terminal. A first current mirror includes a first transistor coupled to a second terminal of the second resistive element and a second transistor coupled to a second terminal of the third resistive element and the first transistor, wherein the output node corresponds to the second terminal of the third resistive element. A second current mirror includes a third transistor coupled to the first transistor and a fourth transistor coupled to the second transistor, third transistor, and a second terminal of the first resistive element. The circuit converts the negative voltage to the positive proportion voltage.

Semiconductor devices for sensing voltages

A memory device including a first memory sector and a second memory sector, each of which includes a respective plurality of local bit lines, which may be selectively coupled to a plurality of main bit lines. The memory device further includes a first amplifier and a second amplifier, and a routing circuit, arranged between the main bit lines and the first and second amplifiers. The routing circuit includes: a first lower switch, arranged between a first lower main bit line and a first input of the first amplifier; a second lower switch, arranged between the first lower main bit line and a first input of the second amplifier; a first upper switch, arranged between a first upper main bit line and the first input of the first amplifier; and a second upper switch, arranged between the first upper main bit line and the first input of the second amplifier. The second inputs of the first and second amplifiers are coupled to a second lower main bit line and to a second upper main bit line, respectively.

Device for switching between different reading modes of a non-volatile memory and method for reading a non-volatile memory

The present invention provides a differential sensing circuit with a dynamic voltage reference for a single-ended bit line memory is disclosed. The exemplary differential sensing circuit comprises: a dynamic voltage reference generating unit and a differential sensing amplifying unit. The dynamic voltage reference generating unit is coupled to an input voltage, and utilized for receiving a setting signal to generate the dynamic voltage reference. The differential sensing amplifying unit is coupled to the single-ended bit line memory and the dynamic voltage reference generating unit, and utilized for receiving at least an input signal from the single-ended bit line memory and the dynamic voltage reference from the dynamic voltage reference generating unit, so as to generate at least an output signal accordingly.

Differential sensing circuit with dynamic voltage reference for single-ended bit line memory

A single-ended input sense amplifier uses a pass device to couple the input local bit-line to a global bit-line evaluation node. The sense amplifier also includes a pair of cross-coupled inverters, a first inverter of which has an input that coupled directly to the global bit-line evaluation node. The output of the second inverter is selectively coupled to the global bit-line evaluation node in response to a control signal, so that when the pass device is active, the local bit line charges or discharges the global bit-line evaluation node without being affected substantially by a state of the output of the second inverter. When the control signal is in the other state, the cross-coupled inverter forms a latch. An internal output control circuit of the second inverter interrupts the feedback provided by the second inverter in response to the control signal.

Gated-feedback sense amplifier for single-ended local bit-line memories

A method for operating a charge pump that supplies switching current for a plurality of transistors includes a capacitor generating a pumped voltage. A comparator generates a pump control signal for turning on and off charging of the pump capacitor based on a difference between a comparison voltage and a reference voltage. A direct voltage sensor receives a feedback signal reflecting the pumped voltage and generates the comparison voltage in response to the feedback signal. The sensor includes a sensor resistor, a current source configured to drive a sensor current through the sensor resistor, and a differential op-amp that drives the sensor current to cause the voltage drop across the sensor resistor to remain constant as the pumped voltage experiences the voltage drop. The charge pump may include two similar direct voltage sensor controlling positive and negative pumped voltages.

Donald W. Plass

Papers

Gated-feedback sense amplifier for single-ended local bit-line memories

Charge pump generator with direct voltage sensor