E
E. Adams
Researcher at IBM
Publications - 14
Citations - 160
E. Adams is an academic researcher from IBM. The author has contributed to research in topics: Silicon & Electromigration. The author has an hindex of 6, co-authored 14 publications receiving 153 citations.
Papers
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Journal ArticleDOI
The preparation and characterization of titanium boride films
TL;DR: In this article, the boron diffusivities obtained from TiB 2.1 and 2.9 sources were analyzed with the vacancy model and the resistivity and film stress values obtained for titanium diboride films were similar to the values observed for refractory metal silicides.
Patent
Method of fabricating a nitrided silicon oxide gate dielectric layer
E. Adams,Jay S. Burnham,Evgeni Gousev,James S. Nakos,Heather Elizabeth Preuss,Joseph F. Shepard +5 more
TL;DR: In this article, a method of forming a nitrided silicon oxide layer was proposed, which includes: forming a silicon dioxide layer on a surface of a silicon substrate; performing a rapid thermal nitridation of the silicon dioxide layers at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form an initial nitriding silicon oxide layers; and performing a rapidly thermal oxidation or anneal of the initial nitridated silicon oxide surface at aperature of less or equal or equal in to about 90° C and
Patent
In-line electrical monitor for measuring mechanical stress at the device level on a semiconductor wafer
TL;DR: In this paper, a method is presented for measuring and monitoring the mechanical stress at the device level which occurs intrinsically during the fabrication process or which is induced via extrinsic means.
Patent
Ion implanter in-situ mass spectrometer
TL;DR: In this article, an in-situ detection of ions in a beam of an ion implanter device includes a mass spectrometer device having inner and outer walls and, a system for generating and directing an ion implant beam through the mass spectrum device, which generates a magnetic field for directing ions of a desirable type through an aperture for implanting into a semiconductor wafer, and causing undesirable type to collide with the inner or outer wall.
Proceedings ArticleDOI
Advanced metal and dielectric barrier cap films for Cu low k interconnects
Deepika Priyadarshini,Son Nguyen,Hosadurga Shobha,Stephan A. Cohen,Timothy M. Shaw,Eric G. Liniger,Chenming Hu,C. Parks,E. Adams,Jay S. Burnham,Andrew H. Simon,Griselda Bonilla,Alfred Grill,Donald F. Canaperi,Daniel C. Edelstein,D. Collins,Mihaela Balseanu,M. Stolfi,J. Ren,Kavita Shah +19 more
TL;DR: In this paper, a multi-layer SiN barrier film with high breakdown and low leakage is developed for low k interconnects and is compared with the SiCNH barrier film used at previous technology nodes.