Donald F. Canaperi

TL;DR: In this article, a tensile-strained Si layer was transferred to form an ultra-thin (<20 nm) strained Si directly on insulator (SSDOI) structure and electron and hole mobility enhancements were demonstrated.

TL;DR: In this paper, metal-gate FinFET and FDSOI devices were fabricated using total gate silicidation, and they satisfy the following metal gate technology requirements: ideal mobility, low gate leakage, high transconductance, competitive I/sub on/I/sub off, and adjustable V/sub t/.

TL;DR: In this article, a SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-induced layer transfer techniques and the transferred SiGe layer is strain relaxed and has a Ge content ranging from 15% to 25%.

TL;DR: In this paper, a structure incorporating very low dielectric constant (k) insulators with copper wiring to achieve high performance interconnects is proposed, which combines a durable layer for strength with a very low k dielectrics for interconnect electrical performance.

TL;DR: Slurry compositions comprising an oxidizing agent, optionally a copper corrosion inhibitor, abrasive particles; surface active agent, a service of chloride and a source of sulfate ions as discussed by the authors.