Hydrogenated microcrystalline silicon films (μc-Si:H) deposited at high deposition rates (∼2 nm/s) by means of the very-high-frequency (VHF) deposition technique in the high pressure depletion regime have been integrated into single junction p-i-n solar cells. It is demonstrated that μc-Si:H solar cells can be optimized using a twofold approach. First the bulk properties, deposited under steady-state plasma conditions, are optimized by monitoring the presence of crystalline grain boundaries in μc-Si:H. These hydrogenated crystalline grain boundaries can easily be detected via the crystalline surface hydrides contribution to the narrow high stretching modes by infrared transmission spectroscopy. The crystalline grain boundaries suffer from postdeposition oxidation which results in a reduced red response of the solar cell. The absence of these crystalline surfaces in an as-deposited μc-Si:H matrix reflects the device grade microcrystalline bulk material. Second, the prevention of silane backdiffusion from t...

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High-rate deposition of microcrystalline silicon p-i-n solar cells in the high pressure depletion regime

A time-resolved optical emission spectroscopic study identified transient behavior of the excited SiH emission in a parallel plate SiH4∕H2 plasma. The transient behavior could be prevented by filling the background gas with H2 prior to plasma ignition. Applying this condition, state-of-the-art microcrystalline silicon (μc-Si:H) could be deposited irrespective of the applied H2 flow, ultimately demonstrated by a 9.5% efficient solar cell deposited from pure SiH4. The results are discussed in terms of SiH4 back diffusion: an initial diffusion flux of SiH4 from the reactor’s dead volume back into the plasma.

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Highly efficient microcrystalline silicon solar cells deposited from a pure SiH4 flow

Capacitively coupled very-high-frequency hydrogen plasmas have been systematically diagnosed in a wide range of a gas pressure from 5 mTorr to 10 Torr. The plasma parameters, ion species, and ion energy distributions (IEDs) are measured using a Langmuir probe, optical emission spectroscopy, and energy filtered mass spectrometer. The measurement results show that the ion species in a hydrogen plasma is determined from ionization channels and subsequent ion-molecule reactions. The ions are dominated by H2+ at a less-collisional condition of ≲20 mTorr, whereas those are dominated by H3+ at a collisional condition of ≳20 mTorr. The IED is determined by both the sheath potential drop and ion-neutral collisions in the plasma sheath. The IED is broadened for a collisional sheath at ≳0.3 Torr and the ion bombardment energy is lowered. For high-pressure discharge operated at ≈10 Torr, plasmas are characterized by a low electron temperature of ≈0.8 eV and a low ion bombardment energy of ≲15 eV.

Characterization of high-pressure capacitively coupled hydrogen plasmas

There has been a recent rapid expansion of the range of applications of low-temperature plasma processing in Si-based photovoltaic (PV) technologies. The desire to produce Si-based PV materials at an acceptable cost with consistent performance and reproducibility has stimulated a large number of major research and research infrastructure programs, and a rapidly increasing number of publications in the field of low-temperature plasma processing for Si photovoltaics. In this article, we introduce the low-temperature plasma sources for Si photovoltaic applications and discuss the effects of low-temperature plasma dissociation and deposition on the synthesis of Si-based thin films. We also examine the relevant growth mechanisms and plasma diagnostics, Si thin-film solar cells, Si heterojunction solar cells and silicon nitride materials for antireflection and surface passivation. Special attention is paid to the low-temperature plasma interactions with Si materials including hydrogen interaction, wafer cleaning, masked or mask-free surface texturization, the direct formation of p–n junction, and removal of phosphorus silicate glass or parasitic emitters. The chemical and physical interactions in such plasmas with Si surfaces are analyzed. Several examples of the plasma processes and techniques are selected to represent a variety of applications aimed at the improvement of Si-based solar cell performance.

Low-temperature plasma processing for Si photovoltaics

In capacitive hydrogen diluted silane discharges the formation of dust affects plasma processes used, e.g. for thin film solar cell manufacturing. Thus, a basic understanding of the interaction between plasma and dust is required to optimize such processes. We investigate a highly diluted silane discharge experimentally using phase-resolved optical emission spectroscopy to study the electron dynamics, laser light scattering on the dust particles to relate the electron dynamics with the spatial distribution of dust, and current and voltage measurements to characterize the electrical symmetry of the discharge via the dc self-bias. The measurements are performed in single and dual frequency discharges. A mode transition from the α-mode to a bulk drift mode (Ω-mode) is found, if the amount of silane and, thereby, the amount of dust and negative ions is increased. By controlling the electrode temperatures, the dust can be distributed asymmetrically between the electrodes via the thermophoretic force. This affects both the electron heating and the discharge symmetry, i.e. a dc self-bias develops in a single frequency discharge. Using the Electrical Asymmetry Effect (EAE), the dc self-bias can be controlled in dual frequency discharges via the phase angle between the two applied frequencies. The Ω-mode is observed for all phase angles and is explained by a simple model of the electron power dissipation. The model shows that the mode transition is characterized by a phase shift between the applied voltage and the electron conduction current, and that the plasma density profile can be estimated using the measured phase shift. The control interval of the dc self-bias obtained using the EAE will be shifted, if an asymmetric dust distribution is present. However, the width of the interval remains unchanged, because the dust distribution is hardly affected by the phase angle.

https://iopscience.iop.org/article/10.1088/0022-3727/46/17/175205/pdf

The effect of dust on electron heating and dc self-bias in hydrogen diluted silane discharges

An investigation of the effect of the total gas pressure on the deposition of microcrystalline thin films form highly diluted silane in hydrogen discharges was carried out at two different frequencies. The study was performed in conditions of constant power dissipation and constant silane partial pressure in the discharge while using a series of plasma diagnostics as electrical, optical, mass spectrometric, and in situ deposition rate measurements together with a simulator of the gas phase and the surface chemistry of SiH4∕H2 discharges. The results show that both the electron density and energy are affected by the change of the total pressure and the frequency. This in turn influences the rate of high energy electron–SiH4 dissociative processes and the total SiH4 consumption, which are favored by the frequency increase for most of the pressures. Furthermore, frequency was found to have the weakest effect on the deposition rate that was enhanced at 27.12MHz only for the lowest pressure of 1Torr. On the ot...

E. Katsia

Papers

High pressure regime of plasma enhanced deposition of microcrystalline silicon

Total SiH4/H2 pressure effect on microcrystalline silicon thin films growth and structure

Temperature effect and stress on microcrystalline silicon thin films deposited under high pressure plasma conditions

Effect of plasma parameters on the amorphous to microcrystalline silicon transition

Influence of negative substrate bias on plasma properties and silicon film deposition rate