The improvements in the device characteristics of n-channel MOSFET's that occur at low temperatures are considered in this paper. The device parameters for polysilicon gate FET's with channel lengths of the order of 1 µm have been studied both experimentally and theoretically at temperatures ranging from room temperature down to liquid nitrogen temperature. Excellent agreement was found between the experimental dc device characteristics and those predicted by a two-dimensional current transport model, indicating that device behavior is well understood and predictable over this entire temperature range. A device design is presented for an enhancement mode FET with a channel length of I µm that is suitable for operation at liquid nitrogen temperature.

Very small MOSFET's for low-temperature operation

"Extreme environments" represents an important niche market for electronics and spans the operation of electronic components in surroundings lying outside the domain of conventional commercial, or even military, specifications. Such extreme environments would include, for instance, operation to very low temperatures (e.g., to 77 K or even 4.2 K), operation at very high temperatures (e.g., to 200/spl deg/C or even 300/spl deg/C), and operation in a radiation-rich environment (e.g., space). We argue that the unique bandgap-engineered features of silicon-germanium heterojunction bipolar transistors offer great potential to simultaneously satisfy all three extreme environment applications, potentially with little or no process modification, ultimately providing compelling cost advantages at the IC and system level.

On the Potential of SiGe HBTs for Extreme Environment Electronics

Recent predictions that thermal effects will limit future transistor speed improvement motivated an interest in predicting and measuring these effects. A mathematical model of the three-dimensional transient heat flow problem is presented which takes into account the physical structure of the device and the actual region of power dissipation. At any point within the device, the model predicts the time-dependent temperature response to a change in power dissipation. A new method of measuring the local time-dependent thermal behavior of small bipolar transistors is described and used to verify the model. It was found that the thermal spreading resistance becomes important in silicon transistors when the emitter stripe dimensions approach 1 µ. Furthermore, the thermal response is much slower than the electrical response. Also, it was confirmed that adjacent devices in integrated circuits are essentially thermally isolated as far as thermal spreading resistance is concerned.

Thermal properties of very fast transistors

TDI charge-coupled devices: design and applications

In a study performed over the temperature range of 400 to 77 K, Si bipolar transistors were found to have near-ideal characteristics at low temperatures with beta as high as 80 at 77 K. Detailed calculations indicate that the conventional theory of the temperature dependence of beta does not match the data. The discrepancy can be removed if it is assumed that a phenomenological thermal barrier to hole injection is present. Emitter-coupled logic (ECL) ring oscillators are functional at 85 K with no degradation in speed until about 165 K when compared to 358 K (85 degrees C). Calculations using a delay figure of merit indicate that f/sub T/, R/sub b/, and C/sub c/ are the delay components most affected by low-temperature operation. The feasibility of reduced logic swing operation of bipolar circuits at low temperatures is examined. It is found that successful ECL circuit operation at reduced logic swings is possible provided emitter resistance is kept small and can be used to enhance low-temperature power-delay performance. These data suggest that conventionally designed high-performance bipolar devices are suitable for the low-temperature environment. >

On the low-temperature static and dynamic properties of high-performance silicon bipolar transistors

An experimental 2048/spl times/32-stage time-delay and integration (TDI) charge-coupled imaging device has been designed, fabricated, and operated. It is designed for high-speed, low-noise, full-page document imaging with moderate illumination. An overview is presented of its design and performance, detailing unusual design features. These include a photocharge capacity of 3.5 million electrons per pel, a parallel-to-serial interface design that avoids a common charge-transfer bottleneck, and a fast large-signal output stage. A discussion is included of the merits of TDI in document imaging applications.

A TDI charge-coupled imaging device for page scanning

Low temperature operation of emitter-coupled logic circuits offers potential advantages in reliability, noise immunity, power dissipation, and speed. Experimental picosecond germanium integrated circuits exhibit significant improvements in delay with moderate cooling, in contrast to observed degradation in the performance of comparable silicon circuits. The results of a study of the design factors and performance of germanium circuits at low temperatures are described, with comparisons to silicon. The effect of temperature on circuit propagation delay is emphasized. Brief discussions are included relating observed circuit and transistor temperature dependences to those of more fundamental parameters and processes.

E.S. Schlig

Papers

A TDI charge-coupled imaging device for page scanning

Low-temperature operation of Ge picosecond logic circuits