Eiji Yagyu

TL;DR: In this article, the authors provide a glimpse of future GaN device technologies and advanced modeling approaches that can push the boundaries of these applications in terms of performance and reliability, which is a key missing piece to realize the full GaN platform with integrated digital, power, and RF electronics technologies.

TL;DR: In this article, an optical fiber sensor measuring the refractive index of a medium with high sensitivity in a wide range is presented, where a Bragg grating is provided to allow light in a wavelength band in the clad propagation mode to enter the optical fiber.

TL;DR: A mode-evolution-based polarization rotator-splitter built on InP substrate is proposed by combining a mode converter and an adiabatic asymmetric Y-coupler, which effectively converts the fundamental TM mode into the second order TE mode without changing the polarization of the fundamental TE mode.

TL;DR: In this article, the authors presented the high reliability of the guardring-free planar InAlAs avalanche photodiode (APD) and its degradation mode analysis and estimated mean times to failures at 85 are 25, 100, and 22 million hours, respectively.

TL;DR: In this paper, Si ion implantation doping was employed to solve the problem and successfully obtained a sufficiently low contact resistance equivalent to that of HEMT without an AlN spacer layer.