Emily S. Walker

TL;DR: The first direct dry transfer of a single-crystalline thin film grown by molecular beam epitaxy is reported, suggesting a route to integrate other group-V epitaxial films (i.e., phosphorus) with arbitrary substrates, as well as potentially to isolate bismuthene, the atomic thin-film limit of bismuth.

TL;DR: In this article, a large second harmonic voltage signal due to the ordinary Nernst effect was observed in Bi-Sb/Co bilayers, leading to an overestimation of the spin-Hall angle and spin-hall conductivity in topological insulators or semimetals.

TL;DR: In this paper, a 2D Bi/Si(111) heterolayer exhibits inspiring photodetection performance, including a Vis-NIR broadband response with a responsivity up to 80 A W−1 and response time ∼3 μs, which is attributed to promoted generation and transportation of charge carriers in the heterojunction.

TL;DR: In this article, a CMOS compatible process integration of spin-orbit torque (SOT) device with a unique bilayer SOT bottom electrode was demonstrated, achieving an effective spin-Hall angle of 0.27, a median tunneling magneto-resistance ratio of 127% at electrical CD of 57 nm, and a 96% resistance based MTJ yield on 300 mm scale.

TL;DR: The experimental study reveals intriguing thermoelectric effects and devices in epitaxial bismuthene, two-dimensional bismuth with thickness ⩽30 nm, on Si (111), implying the existence of a puckered atomic structure like black phosphorus and paves the way to explore potential applications, such as heat flux sensor, energy converting devices and so on for bismUThene.