scispace - formally typeset
E

Emma Tevaarwerk

Researcher at University of Wisconsin-Madison

Publications -  14
Citations -  366

Emma Tevaarwerk is an academic researcher from University of Wisconsin-Madison. The author has contributed to research in topics: Dip-pen nanolithography & Silicon on insulator. The author has an hindex of 7, co-authored 14 publications receiving 356 citations. Previous affiliations of Emma Tevaarwerk include Northwestern University & Northwest University (United States).

Papers
More filters
Journal ArticleDOI

Electronic transport in nanometre-scale silicon-on-insulator membranes

TL;DR: It is shown—using scanning tunnelling microscopy, electronic transport measurements, and theory—that electronic conduction in thin SOI(001) is determined not by bulk dopants but by the interaction of surface or interface electronic energy levels with the ‘bulk’ band structure of the thin silicon template layer, which enables high-mobility carrier conductionIn nanometre-scale SOI.
Journal ArticleDOI

Toward conductive traces: Dip Pen Nanolithography® of silver nanoparticle-based inks

TL;DR: In this paper, a direct write approach for conductive traces with commercially available silver nanoparticle (AgNP)-based inks using Dip Pen Nanolithography (DPN®) is presented.
Journal ArticleDOI

Quantitative analysis of electric force microscopy: The role of sample geometry

TL;DR: In this article, a voltage modulated electric force microscopy (EFM) image of self-assembled SiGe nanostructures on an insulator is analyzed using three-dimensional simulations.
Patent

Lithography of nanoparticle based inks

TL;DR: An ink composition comprising of a plurality of metallic nanoparticles suspended in a carrier, wherein the carrier comprises water and at least one organic solvent miscible with water, and wherein the composition is formulated for slow dry rate and proper viscosity for DPN as mentioned in this paper.
Journal ArticleDOI

Ferromagnetic Iron Boride (Fe3B) Nanowires

Abstract: Single-crystal iron boride (Fe3B) nanowires were synthesized on Pt and Pd (Pt/Pd) coated sapphire substrates by a chemical vapor deposition method at 800 °C using boron triiodide (BI3) and iron iodide (FeI2) as precursors Morphology of the Fe3B nanowires can be controlled by manipulating the Pt/Pd film thickness and the growth time Transmission electron microscopy and selected area electron diffraction were used to analyze the crystal structures of these novel materials Electron energy-loss spectroscopy and X-ray energy-dispersive spectroscopy studies on these nanowires confirm that they are composed of boron and iron Scanning electron microscopy was employed to observe the morphology of these nanomaterials The typical size of the iron boride nanowires is about 5−50 nm in width and 2−30 μm in length The vapor−liquid−solid (VLS) growth process is shown to be the growth mechanism of the Fe3B nanowires Room temperature magnetic force microscopy investigations on the iron boride nanowires suggest that