E
Emma Tevaarwerk
Researcher at University of Wisconsin-Madison
Publications - 14
Citations - 366
Emma Tevaarwerk is an academic researcher from University of Wisconsin-Madison. The author has contributed to research in topics: Dip-pen nanolithography & Silicon on insulator. The author has an hindex of 7, co-authored 14 publications receiving 356 citations. Previous affiliations of Emma Tevaarwerk include Northwestern University & Northwest University (United States).
Papers
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Journal ArticleDOI
Electronic transport in nanometre-scale silicon-on-insulator membranes
Pengpeng Zhang,Emma Tevaarwerk,Byoung Nam Park,Donald E. Savage,George K. Celler,Irena Knezevic,Paul G. Evans,Mark A. Eriksson,Max G. Lagally +8 more
TL;DR: It is shown—using scanning tunnelling microscopy, electronic transport measurements, and theory—that electronic conduction in thin SOI(001) is determined not by bulk dopants but by the interaction of surface or interface electronic energy levels with the ‘bulk’ band structure of the thin silicon template layer, which enables high-mobility carrier conductionIn nanometre-scale SOI.
Journal ArticleDOI
Toward conductive traces: Dip Pen Nanolithography® of silver nanoparticle-based inks
Hung-Ta Wang,Omkar A. Nafday,Jason Haaheim,Emma Tevaarwerk,Nabil A. Amro,Raymond Sanedrin,Chih-Yang Chang,Fan Ren,Stephen J. Pearton +8 more
TL;DR: In this paper, a direct write approach for conductive traces with commercially available silver nanoparticle (AgNP)-based inks using Dip Pen Nanolithography (DPN®) is presented.
Journal ArticleDOI
Quantitative analysis of electric force microscopy: The role of sample geometry
TL;DR: In this article, a voltage modulated electric force microscopy (EFM) image of self-assembled SiGe nanostructures on an insulator is analyzed using three-dimensional simulations.
Patent
Lithography of nanoparticle based inks
TL;DR: An ink composition comprising of a plurality of metallic nanoparticles suspended in a carrier, wherein the carrier comprises water and at least one organic solvent miscible with water, and wherein the composition is formulated for slow dry rate and proper viscosity for DPN as mentioned in this paper.
Journal ArticleDOI
Ferromagnetic Iron Boride (Fe3B) Nanowires
Abstract: Single-crystal iron boride (Fe3B) nanowires were synthesized on Pt and Pd (Pt/Pd) coated sapphire substrates by a chemical vapor deposition method at 800 °C using boron triiodide (BI3) and iron iodide (FeI2) as precursors Morphology of the Fe3B nanowires can be controlled by manipulating the Pt/Pd film thickness and the growth time Transmission electron microscopy and selected area electron diffraction were used to analyze the crystal structures of these novel materials Electron energy-loss spectroscopy and X-ray energy-dispersive spectroscopy studies on these nanowires confirm that they are composed of boron and iron Scanning electron microscopy was employed to observe the morphology of these nanomaterials The typical size of the iron boride nanowires is about 5−50 nm in width and 2−30 μm in length The vapor−liquid−solid (VLS) growth process is shown to be the growth mechanism of the Fe3B nanowires Room temperature magnetic force microscopy investigations on the iron boride nanowires suggest that