scispace - formally typeset
E

Enbo Zhu

Researcher at University of California, Los Angeles

Publications -  38
Citations -  6922

Enbo Zhu is an academic researcher from University of California, Los Angeles. The author has contributed to research in topics: Catalysis & Platinum. The author has an hindex of 22, co-authored 31 publications receiving 5268 citations. Previous affiliations of Enbo Zhu include Beijing Institute of Technology.

Papers
More filters
Journal ArticleDOI

High-performance transition metal–doped Pt3Ni octahedra for oxygen reduction reaction

TL;DR: In this article, surface-doped Pt3Ni octahedra supported on carbon with transition metals, termed M•Pt3Ni/C, where M is vanadium, chromium, manganese, iron, cobalt, molybdenum (Mo), tungsten, or rhenium.
Journal ArticleDOI

Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions.

TL;DR: The creation of van der Waals metal–semiconductor junctions is reported, in which atomically flat metal thin films are laminated onto two-dimensional semiconductors without direct chemical bonding, creating an interface that is essentially free from chemical disorder and Fermi-level pinning.
Journal ArticleDOI

Stabilization of High-Performance Oxygen Reduction Reaction Pt Electrocatalyst Supported on Reduced Graphene Oxide/Carbon Black Composite

TL;DR: The accelerated durability test (ADT) demonstrates that the hybrid supporting material can dramatically enhance the durability of the catalyst and retain the electrochemical surface area (ECSA) of Pt: the final ECSA of the Pt nanocrystal on the hybrid support after 20 000 ADT cycles is retained at >95%, much higher than the commercially available catalyst.
Journal ArticleDOI

Toward barrier free contact to molybdenum disulfide using graphene electrodes.

TL;DR: Benefiting from the barrier-free transparent contacts, it is shown that a metal-insulator transition can be observed in a two-terminal MoS2 device, a phenomenon that could be easily masked by Schottky barriers found in conventional metal-contactedMoS2 devices.