Showing papers by "Eric Tournié published in 1990"
TL;DR: The Ga 1- x In x As y Sb 1- y quaternary alloy has been grown by liquid phase epitaxy at high temperature ( T = 600-615° C) on (100) oriented GaSb substrate as discussed by the authors.
36 citations
TL;DR: In this paper, a GaSb lattice matched Ga1−xInxAsySb1−y has been grown by liquid phase epitaxy on (100 and (111)B oriented substrates using initial melt supersaturation ΔT varying from 10 to 30°C, at growth temperatures >600°C.
Abstract: GaSb lattice‐matched Ga1−xInxAsySb1−y has been grown by liquid phase epitaxy on (100) and (111)B oriented substrates using initial melt supersaturation ΔT varying from 10 to 30 °C, at growth temperatures >600 °C. It is shown that the band‐gap cutoff wavelength, measured at room temperature by the electroreflectance method, is ∼2.38 μm for (100) layers whatever ΔT, and increases from 2.38 μm up to 2.51 μm for (111)B oriented layers when ΔT is increased from 15 to 25 °C. Photoluminescence experiments at 2 K confirm the band‐gap reduction occurring at high ΔT with the (111)B orientation.
34 citations