A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

Lithographic apparatus, and device manufacturing method

An exposure apparatus for emitting exposure light onto a substrate via a projection optical system and a liquid to expose the substrate includes a supply pipe which supplies the liquid; a recovery pipe which recovers the liquid; a connection pipe which connects the supply pipe and the recovery pipe; and a switching device which switches a flow path of the liquid so that when liquid supply is stopped, the liquid that has flowed into the supply pipe flows to the recovery pipe via the connection pipe. The apparatus may further include a temperature regulation apparatus connected to the supply pipe, which performs temperature regulation of the liquid supplied to the supply pipe, and has a rough temperature regulator which roughly regulates the temperature of the liquid, and a fine temperature regulator which is arranged between the rough temperature regulator and the supply pipe and performs fine regulation of this temperature.

Exposure apparatus, and device manufacturing method

There is provided an exposure apparatus capable of forming a desirable device pattern by removing unnecessary liquid when performing exposure by projecting a pattern onto the substrate via a projection optical system and the liquid. The exposure device projects an image of the pattern onto the substrate P via the projection optical system and the liquid so as to expose the substrate P. The exposure device includes a liquid removing mechanism 40 which removes the liquid remaining on a part 7 arranged in the vicinity of the image plane of the projection optical system.

Exposure apparatus and method for producing device

The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

Microlithographic projection exposure apparatus

In an exposure apparatus (EX), a liquid (1) is placed between a projection optical system (PL) and a substrate (P), and the apparatus (EX) exposes the substrate (P) by projecting an image of a pattern on the substrate (P) through the optical projection system (PL) and the liquid (1). The apparatus has a liquid removing mechanism (40) provided near an image surface of the projection optical system (PL) and intermittently blowing a gas to a reference member (7) and a moving mirror (55) to which the liquid (1) is adhered, removing the liquid. In projecting a pattern on a substrate through a projection optical system and a liquid and exposing the substrate, the structure above makes it possible that unnecessary liquid is removed and a desired device pattern is formed on the substrate.

Exposure apparatus and device producing method

A lithography apparatus and device manufacturing methods are disclosed A lithography apparatus includes a support stage, and a measurement system including a sensor part and a reference part, the measurement system being configured to determine the position and/or orientation of the support stage, or of a component mounted on the support stage, relative to a reference frame by using the sensor part to interact with the reference part, wherein: the reference frame comprises N sub-frames coupled together so as to behave predominantly as a single rigid body with respect to vibrations below a first reference frequency and predominantly as an N-body system with respect to vibrations above a second reference frequency, where N is an integer greater than 1

Lithography apparatus, and device manufacturing method

An optical element for correcting aberrations in an optical apparatus has a casing. The casing is filled with liquid and has a support layer and a cover layer designed to pass light of a predetermined wavelength range. The casing accommodates several actuators. Each actuator has a first end supporting the cover layer and a second end supporting the support layer. Each actuator is able to locally change a local distance between the support layer and the cover layer to correct for local aberrations in a light beam directed to the optical element by providing local phase shifts. The optical element may be used in a lithographic apparatus.

Optical element for correction of aberration, and a lithographic apparatus comprising same

The system has a cooling passage passing a cooling medium. The cooling passage receives heat from system components and discharges the received heat. The system components are selected from collector mirrors (16, 22, 24, 26, 28, 40), reticle table (34) and actuators (52, 54). The cooling medium comprises supercritical carbon dioxide and nitrogen, and is selected from a mixture of carbon dioxide and a cooling medium component. The cooling medium is provided as a mixture of liquid and gaseous phase, and stays in the cooling passage under pressure at a range of 50 to 70 bars. Independent claims are also included for the following: (1) a system component of an optical system (2) an optical system for EUV applications.

Cooling system for e.g. collector mirrors, of EUV projection exposure system for lithographic manufacturing of semiconductor component, has cooling passage receiving heat from system components and discharging received heat

A system and method for controlling exposure in a lithographic apparatus includes an optical system having adjustable optical elements (46) capable of being decentered to adjust an illumination distribution. Additional embodiments include lithographic apparatus structure constructed and arranged to allow for spatial dose control, for example as a function of X and Y in response to spatial variation in polarization state and birefringence of optical components of the lithographic system.

Lithographic apparatus and method of controlling

While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are readying to start high volume manufacturing, ASML and Zeiss are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55. 
The purpose of this high-NA scanner, targeting an ultimate resolution of 8nm, is to extend Moore’s law throughout the next decade. 
A novel lens design, capable of providing the required Numerical Aperture, has been identified; this lens will be paired with new, faster stages and more accurate sensors enabling the tight focus and overlay control needed for future process nodes. 
In this paper an update will be given on the status of the developments at Carl Zeiss and ASML. Next to this, we will address several topics inherent in the new design and smaller target resolution: M3D effects, polarization, focus control and stitching.

Erik Roelof Loopstra

Papers

Lithography apparatus, and device manufacturing method

Optical element for correction of aberration, and a lithographic apparatus comprising same

Cooling system for e.g. collector mirrors, of EUV projection exposure system for lithographic manufacturing of semiconductor component, has cooling passage receiving heat from system components and discharging received heat

Lithographic apparatus and method of controlling

High-NA EUV lithography exposure tool progress (Conference Presentation)