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Ernesto Joselevich

Researcher at Weizmann Institute of Science

Publications -  117
Citations -  8966

Ernesto Joselevich is an academic researcher from Weizmann Institute of Science. The author has contributed to research in topics: Carbon nanotube & Nanowire. The author has an hindex of 38, co-authored 111 publications receiving 8439 citations. Previous affiliations of Ernesto Joselevich include Ben-Gurion University of the Negev & Hebrew University of Jerusalem.

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Trapping cold atoms using surface-grown carbon nanotubes

TL;DR: In this paper, a feasibility study for loading cold atomic clouds into magnetic traps created by single-wall carbon nanotubes grown directly onto dielectric surfaces is presented, which opens the way for a novel type of conductor to be used in atomchips, enabling atom trapping at sub-micron distances.
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Bottom-Up Tri-gate Transistors and Submicrosecond Photodetectors from Guided CdS Nanowalls.

TL;DR: These tri-gate transistors act as enhancement-mode transistors with an on/off current ratio on the order of 108, 4 orders of magnitude higher than the best results ever reported for planar enhancement- mode CdS transistors.
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Photoinduced Electron Transfer in Supramolecular Assemblies Composed of One-Shell and Two-Shell Dialkoxybenzene-Tethered Ru(II)−Tris(bipyridine) Derivatives and a Bipyridinium Cyclophane

TL;DR: In this article, photoinduced electron transfer reactions are characterized in supramolecular assemblies consisting of a series of Ru(II)−bipyridine complexes that include tethered dialkoxybenzene units 2−5 and cyclo[bis(N,N‘-p-xylylene-4,4‘)-biprinium)], BXV4+ (1).
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Origin of torsion-induced conductance oscillations in carbon nanotubes

TL;DR: In this paper, the authors combine electromechanical measurements with ab initio density-functional calculations to settle the controversy about the origin of torsion-induced conductance oscillations in multiwall carbon nanotubes.
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Guided Growth of Horizontal GaN Nanowires on Quartz and Their Transfer to Other Substrates

TL;DR: The guided growth of well-aligned horizontal GaN nanowires on quartz and their subsequent transfer to silicon wafers by selective etching of the quartz while maintaining their alignment is demonstrated.