Showing papers by "Errol Antonio C. Sanchez published in 2012"

Method of epitaxial germanium tin alloy surface preparation

Abstract: Methods of preparing a clean surface of germanium tin or silicon germanium tin layers for subsequent deposition are provided. An overlayer of Ge, doped Ge, another GeSn or SiGeSn layer, a doped GeSn or SiGeSn layer, an insulator, or a metal can be deposited on a prepared GeSn or SiGeSn layer by positioning a substrate with an exposed germanium tin or silicon germanium tin layer in a processing chamber, heating the processing chamber and flowing a halide gas into the processing chamber to etch the surface of the substrate using either thermal or plasma assisted etching followed by depositing an overlayer on the substantially oxide free and contaminant free surface. Methods can also include the placement and etching of a sacrificial layer, a thermal clean using rapid thermal annealing, or a process in a plasma of nitrogen trifluoride and ammonia gas.

Semiconductor substrate processing system

Abstract: Apparatus for processing substrates are provided. In some embodiments, a processing system may include a first transfer chamber and a first process chamber coupled to the transfer chamber, the process chamber further comprising a substrate support to support a processing surface of a substrate within the process chamber, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector provides the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.

Method for forming group III/V conformal layers on silicon substrates

Abstract: A method for forming a conformal group III/V layer on a silicon substrate and the resulting substrate with the group III/V layers formed thereon. The method includes removing the native oxide from the substrate, positioning a substrate within a processing chamber, heating the substrate to a first temperature, cooling the substrate to a second temperature, flowing a group III precursor into the processing chamber, maintaining the second temperature while flowing a group III precursor and a group V precursor into the processing chamber until a conformal layer is formed, heating the processing chamber to an annealing temperature, while stopping the flow of the group III precursor, and cooling the processing chamber to the second temperature. Deposition of the III/V layer may be made selective through the use of halide gas etching which preferentially etches dielectric regions.

Apparatus for deposition of materials on a substrate

Abstract: Methods and apparatus for deposition of materials on a substrate are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein to support a processing surface of a substrate, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector is positioned to provide the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface of the substrate, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.

Selective Epitaxial Germanium Growth on Silicon - Trench Fill and In Situ Doping

Abstract: Single-crystal germanium (Ge) offers high electron and hole mobilities and is a viable candidate for channel materials in advanced metal-oxide-semiconductor field-effect transistors (MOSFETs). This work encompasses heteroepitaxial Ge growth on silicon (Si). The focus is on trench fill by undoped Ge as well as in situ Ge doping, both p-type and n-type. These aspects of epitaxial Ge growth play important roles in the fabrication of channel and source/drain in small MOSFETs for advanced technology nodes, including nonplanar transistors like FinFETs.

Method of forming high growth rate, low resistivity germanium film on silicon substrate

Abstract: A method of forming a doped semiconductor layer on a substrate is provided. A foundation layer having a crystal structure compatible with a thermodynamically favored crystal structure of the doped semiconductor layer is formed on the substrate and annealed, or surface annealed, to substantially crystallize the surface of the foundation layer. The doped semiconductor layer is formed on the foundation layer. Each layer may be formed by vapor deposition processes such as CVD. The foundation layer may be germanium and the doped semiconductor layer may be phosphorus doped germanium.

Apparatus for sublimating solid state precursors

Abstract: In some embodiments, an apparatus for sublimating solid state precursors may include a container having a body, lid, and removable bottom, wherein the removable bottom is sealable to the body to seal the container when coupled to the body; a tray insertable into the container from a bottom of the container, the tray comprising: a gas permeable base to support a solid state precursor, the gas permeable base having a through hole disposed proximate the center of the gas permeable base; an outer ring disposed around an outer edge of the base and extending upwardly from the base, the outer ring configured to interface with the lid of the container; and an inner ring disposed within the through hole, the inner ring configured to interface with the lid of the container; an inlet disposed through the lid of the container; and an outlet disposed through the lid of the container.