H
Howard Beckford
Researcher at Applied Materials
Publications - 7
Citations - 387
Howard Beckford is an academic researcher from Applied Materials. The author has contributed to research in topics: Deposition (chemistry). The author has an hindex of 4, co-authored 7 publications receiving 387 citations.
Papers
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Patent
Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
David K. Carlson,Satheesh Kuppurao,Howard Beckford,Herman Diniz,Kailash Kiran Patalay,Brian H. Burrows,Jeffrey Campbell,Zouming Zhu,Xiaowei Li,Errol Antonio C. Sanchez +9 more
TL;DR: In this paper, a method and apparatus for delivering precursor materials to a processing chamber is described, which includes a gas distribution assembly having multiple gas delivery zones, each zone may include a plenum having an inlet for receiving a precursor gas and at least one source of non-thermal energy, such as an infrared light source.
Patent
Method and apparatus to control semiconductor film deposition characteristics
David K. Carlson,Andrew Lam,Manish Hemkar,Errol Antonio C. Sanchez,Satheesh Kuppurao,Howard Beckford +5 more
TL;DR: In this paper, methods, systems and apparatus for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties are described.
Patent
Methods for in-situ generation of reactive etch and growth specie in film formation processes
TL;DR: In this paper, the formation and utilization of metastable specie in a reaction chamber for processing substrates is described, which may be used for etching the surface of substrates in situ, deposition processes during processing of the substrate.
Patent
Apparatus to control semiconductor film deposition characteristics
Satheesh Kuppurao,David K. Carlson,Manish Hemkar,Andrew Lam,Errol Antonio C. Sanchez,Howard Beckford +5 more
TL;DR: In this article, the authors described a system and apparatus for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties.