An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Lasing is experimentally demonstrated in a direct bandgap GeSn alloy, grown directly onto Si(001). The authors observe a clear lasing threshold as well as linewidth narrowing at low temperatures.

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Lasing in direct-bandgap GeSn alloy grown on Si

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a channel region in a workpiece, and forming a source or drain region proximate the channel region. The source or drain region includes a contact resistance-lowering material layer comprising SiP, SiAs, or a silicide. The source or drain region also includes a channel-stressing material layer comprising SiCP or SiCAs.

Semiconductor Devices and Methods of Manufacture Thereof

Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.

Method for forming silicon-containing materials during a photoexcitation deposition process

Embodiments of a precursor feed system for a semiconductor process are described herein. The precursor feed system provides improved flow control of a vaporized precursor material to a process chamber by improving flow characteristics of vaporized precursor materials, carried by a carrier gas, which may be an inert gas. The precursor feed system also reduces an occurrence of a pressure drop in conduits that deliver the precursor to the process chamber. Reducing the occurrence of the pressure drop also reduces a decrease of energy from the gas, thus reducing a tendency of the gas to condense in the along the flow path.

Liquid precursor system

Embodiments described herein generally relate to a substrate processing system, such as an etch processing system. In one embodiment, a method of processing a substrate is disclosed herein. The method includes removing a native oxide from a surface of the substrate, baking the substrate in a pre-treatment thermal chamber such that double atomic steps are formed on the surface of the substrate, and forming an epitaxial layer on the substrate after the substrate is baked.

Method for inter-chamber process

One or more embodiments herein relate to methods for detection using optical emission spectroscopy. In these embodiments, an optical signal is delivered from the process chamber to an optical emission spectrometer (OES). The OES identifies emission peaks of photons, which corresponds to the optical intensity of radiation from the photons, to determine the concentrations of each of the precursor gases and reaction products. The OES sends input signals of the data results to a controller. The controller can adjust process variables within the process chamber in real time during deposition based on the comparison. In other embodiments, the controller can automatically trigger a process chamber clean based on a comparison of input signals of process chamber residues received before the deposition process and input signals of process chamber residues received after the deposition process.

Methods for detection using optical emission spectroscopy

SOI based GaP source drain 1T DRAM with silicon channel is proposed. Using BJT-latch based programing, it is shown that the scalability of GaP-SD 1T-DRAM can be extended up to 20nm. Nickel alloying of GaP is proposed as a method to reduce the sheet and contact resistance of GaP source and drain. Using nickel alloying, the ON-current of the GaP-SD transistor is improved by an order and the proper scalability behavior is established.

GaP source-drain SOI 1T-DRAM: Solving the key technological challenges

Hierin sind Verfahren zum Ablagern von Schichten mit reduzierter Grenzflachenverschmutzung offenbart. Die erfinderischen Verfahren konnen die Verschmutzung an der Grenzflache zwischen abgelagerten Schichten, beispielsweise zwischen einer abgelagerten Schicht und einem darunter liegenden Substrat oder Film, vorteilhaft reduzieren. In einigen Ausfuhrungsformen kann ein Verfahren zum Ablagern einer Schicht das Tempern einer siliziumhaltigen Schicht (200) mit einer ersten Schicht (202), die darauf abgelagert ist, in einer reduzierenden Atmosphare; das Entfernen der ersten Schicht unter Anwendung eines Atzvorgangs zum Freilegen der siliziumhaltigen Schicht nach dem Tempern; und das Ablagern einer zweiten Schicht (210) auf der freigelegten siliziumhaltigen Schicht enthalten.

Errol Antonio C. Sanchez

Papers

Liquid precursor system

Method for inter-chamber process

Methods for detection using optical emission spectroscopy

GaP source-drain SOI 1T-DRAM: Solving the key technological challenges

Verfahren zum Ablagern von Schichten mit reduzierter Grenzflächenverschmutzung