An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Lasing is experimentally demonstrated in a direct bandgap GeSn alloy, grown directly onto Si(001). The authors observe a clear lasing threshold as well as linewidth narrowing at low temperatures.

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Lasing in direct-bandgap GeSn alloy grown on Si

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a channel region in a workpiece, and forming a source or drain region proximate the channel region. The source or drain region includes a contact resistance-lowering material layer comprising SiP, SiAs, or a silicide. The source or drain region also includes a channel-stressing material layer comprising SiCP or SiCAs.

Semiconductor Devices and Methods of Manufacture Thereof

Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.

Method for forming silicon-containing materials during a photoexcitation deposition process

Method and apparatus to control semiconductor film

Methods and apparatus for forming semiconductor structures are disclosed herein. In some embodiments, a semiconductor structure may include a first germanium carbon layer having a first side and an opposing second side; a germanium-containing layer directly contacting the first side of the first germanium carbon layer; and a first silicon layer directly contacting the opposing second side of the first germanium carbon layer. In some embodiments, a method of forming a semiconductor structure may include forming a first germanium carbon layer atop a first silicon layer; and forming a germanium-containing layer atop the first germanium carbon layer.

Methods and apparatus for forming silicon germanium-carbon semiconductor structures

A thin layer (15A) of Si seed was employed to help nucleate low temperature selective SiGe epitaxial film in recessed source and drain. In combination with pre-epi wet clean and low temperature chemical bake, use of Si seed resulted in improved SiGe film morphology and micro-loading effect, and further improved dislocation on the lateral recess interface. Introduction Locally strained Si technology using embedded SiGe has demonstrated improved pMOSFET device performance through hole mobility enhancement [1-3]. Widely used, embedded SiGe is achieved by selectively growing epitaxial SiGe film in recessed Si source and drain in the pMOSFET area. Typical process steps for recessed source and drain SiGe flow is described elsewhere [2]. Prior to selective SiGe epi growth, multiple implants and dry etch of source and drain result in surface damage and chemical residues. Surface quality and cleanliness of the etched Si surfaces have great impact on the morphology and SiGe film quality. Typically, wet clean (in diluted HF) or high temperature bake (> 800 °C) is used as a preepi step to remove surface C and O. Previous study [4] indicated improvement of SiGe film morphology by multiple cycles of wet clean in ozonated DI/SC1/DHF. For most harsh surfaces with severe damage casued by implant and dry etch, use of Si seed layer is employed to nucleate uniform SiGe film with good quality and to minimize micro-loading effect. Experiments and Results Prior to SiGe deposition, device wafers were cleaned in ozonated DI, SC1, and dipped in diluted HF (DHF). Wafers were introduced to the reaction chamber for low temperature bake followed by selective deposition of Si seed and SiGe film in recessed source and drain areas in the pMOS area. Control wafer was process with similar pre-epi wet clean, bake, and deposition without the seed layer. Wafers with severe surface damage did not yield SiGe film growth of good morphology without the seed layer. However, wafers with surface damage resulted in difference in SiGe film morphology with or without the Si seed as shown in Figure 1 and Figure 2. Improved surface morphology is observed as clear faceting and dislocation free around the lateral recess interface in the case with the Si seed. Also, the surface roughness can be healed well in the different density area of wafer by Si seed, further improve micro-loading with the similar incubation time. Micro-loading between isolated area and dense area was improved 92% once Si seed layer was applied. Besides, Si seed implement not only decrease micro-loading effect but also without SiGe quality degradation. Micro-loading was defined as (maximum thickness-minimum thickness)/minimum thickness in the same die. (a) (b) Figure 1. Comparison of morphology of selective grown SiGe film (a) with and (b) without Si seed.

Effectiveness of Si Seed for Selective SiGe Epitaxial Deposition in Recessed Source and Drain for Locally Strained pMOS Application

The suppression of defects such as antiphase domain boundaries (APBs) is a key challenge in the effort to integrate III-V compound semiconductor devices on Si. The formation of APBs naturally arises from growing a polar material on a nonpolar substrate. Surface contamination present on the substrate prior to growth can also disrupt the ordering of atoms in an epitaxial layer and lead to extended defects. In this study, the amount of contamination on Si(100) wafers was varied by approximately an order of magnitude to investigate the effect on formation of APBs in an epitaxial GaAs film grown by MOCVD. The results indicate a direct correlation between the interfacial oxygen and carbon impurity dose and the APB density.

The Effect of Interfacial Contamination on Antiphase Domain Boundary Formation in GaAs on Si(100)

Embodiments of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one embodiment, the susceptor includes a first rim, an inner region coupled to and surrounded by the first rim, and one or more annular protrusions formed on the inner region. The one or more annular protrusions may be formed on the inner region at a location corresponding to the location where a valley is formed on the substrate, and the one or more annular protrusions help reduce or eliminate the formation of the valley.

Errol Antonio C. Sanchez

Papers

Method and apparatus to control semiconductor film

Methods and apparatus for forming silicon germanium-carbon semiconductor structures

Effectiveness of Si Seed for Selective SiGe Epitaxial Deposition in Recessed Source and Drain for Locally Strained pMOS Application

The Effect of Interfacial Contamination on Antiphase Domain Boundary Formation in GaAs on Si(100)

New susceptor design to eliminate deposition valleys in the wafer