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Evans M. Harrell

Researcher at Georgia Institute of Technology

Publications -  98
Citations -  2865

Evans M. Harrell is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Eigenvalues and eigenvectors & Laplace operator. The author has an hindex of 30, co-authored 96 publications receiving 2745 citations. Previous affiliations of Evans M. Harrell include Haverford College & University of Vienna.

Papers
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A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs

TL;DR: In this article, a compact, physical, short-channel threshold voltage model for undoped symmetric double-gate MOSFETs is derived based on an analytical solution of the two-dimensional (2-D) Poisson equation with the mobile charge term included.
Book

Quantum mechanics of atoms and molecules

TL;DR: The third volume of this textbook on mathematical physics is devoted to quantum mechanics and especially to its applications to atomic systems as mentioned in this paper, where the author builds the theory on an axiomatic basis and uses the functional analysis of unbounded operators to bridge the gap to physics and its experiments.
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On trace identities and universal eigenvalue estimates for some partial differential operators

TL;DR: In this paper, a trace identity for the spectra of self-adjoint operators H modeled on the Dirichlet Laplacian or, more generally, on Schrodinger operators of the form (p−A(x))2 + V (x), where p = 1i ∇ is the usual momentum operator in convenient units and A(x) is the magnetic vector potential.
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The mathematical theory of resonances whose widths are exponentially small

TL;DR: In this paper, it was shown how the rigorous justification of resonance widths in Paper I can be simplified by exploiting Langer's trick of expanding the independent variable rather than the dependent variable.