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Eyob Kebede Chere

Researcher at University of Houston

Publications -  8
Citations -  787

Eyob Kebede Chere is an academic researcher from University of Houston. The author has contributed to research in topics: Thermoelectric effect & Seebeck coefficient. The author has an hindex of 7, co-authored 8 publications receiving 657 citations.

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Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe1‐xSx by Iodine Doping

TL;DR: In this paper, the first report on thermoelectric properties of n-type Sn chalcogenide alloys is presented, showing that with increasing content of iodine, the carrier concentration changed from 2.3 × 1017 cm−3 (p-type) to 5.0 × 1015 cm −3 (n-type), and the peak ZT of ≈ 0.8 at about 773 K measured along the hot pressing direction.
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Studies on thermoelectric figure of merit of Na-doped p-type polycrystalline SnSe

TL;DR: In this article, a room temperature carrier concentration of ∼2.7 × 1019 cm−3 was obtained in 2 atm% Na-doped SnSe samples with the highest power factor obtained in 1.5 atm % Na doping.
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Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration

TL;DR: In this paper, the Seebeck coefficient and power factor of n-type PbSe at temperatures below 600 K were investigated and it was found that the higher Seebeck coefficients and power factors are due to higher Hall mobility ≈1000 cm2 V−1s−1 at lower carrier concentration.
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Studies on mechanical properties of thermoelectric materials by nanoindentation

TL;DR: In this paper, the hardness and elastic modulus of thermoelectric generators (TEG) for applications like automobile waste heat recovery, where thermal stress is a major concern, are assessed using nanoindentation and atomic force microscopy (AFM).

Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration

TL;DR: In this paper, the Seebeck coefficient and power factor of n-type PbSe at temperatures below 600 K were investigated and it was found that the higher Seebeck coefficients and power factors are due to higher Hall mobility ≈1000 cm2 V−1s−1 at lower carrier concentration.