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Keshab Dahal
Researcher at University of Houston
Publications - 22
Citations - 1695
Keshab Dahal is an academic researcher from University of Houston. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 16, co-authored 22 publications receiving 1271 citations. Previous affiliations of Keshab Dahal include Texas Center for Superconductivity.
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Journal ArticleDOI
Hierarchical CoP/Ni5P4/CoP microsheet arrays as a robust pH-universal electrocatalyst for efficient hydrogen generation
Ishwar Kumar Mishra,Haiqing Zhou,Haiqing Zhou,Jingying Sun,Fan Qin,Keshab Dahal,Jiming Bao,Shuo Chen,Zhifeng Ren +8 more
TL;DR: In this paper, a very active and durable pH-universal electrocatalyst for the hydrogen evolution reaction (HER) is constructed using a sandwich-like structure, where hierarchical cobalt phosphide (CoP) nanoparticles serve as thin skins covering both sides of Ni5P4/CoP microsheet arrays, forming self-supported sandwich-helene arrays with lots of mesopores and macropores.
Journal ArticleDOI
Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe1‐xSx by Iodine Doping
Qian Zhang,Eyob Kebede Chere,Jingying Sun,Feng Cao,Keshab Dahal,Shuo Chen,Gang Chen,Zhifeng Ren +7 more
TL;DR: In this paper, the first report on thermoelectric properties of n-type Sn chalcogenide alloys is presented, showing that with increasing content of iodine, the carrier concentration changed from 2.3 × 1017 cm−3 (p-type) to 5.0 × 1015 cm −3 (n-type), and the peak ZT of ≈ 0.8 at about 773 K measured along the hot pressing direction.
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Studies on thermoelectric figure of merit of Na-doped p-type polycrystalline SnSe
TL;DR: In this article, a room temperature carrier concentration of ∼2.7 × 1019 cm−3 was obtained in 2 atm% Na-doped SnSe samples with the highest power factor obtained in 1.5 atm % Na doping.
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NbFeSb-based p-type half-Heuslers for power generation applications
Giri Joshi,Ran He,Michael Engber,Georgy Samsonidze,Tej Pantha,Ekraj Dahal,Keshab Dahal,Jian Yang,Yucheng Lan,Boris Kozinsky,Zhifeng Ren +10 more
TL;DR: In this article, a peak dimensionless figure-of-merit (ZT) of ∼1 at 700 °C in a nanostructured p-type Nb0.05 composition is reported.
Journal ArticleDOI
Deep defect level engineering: a strategy of optimizing the carrier concentration for high thermoelectric performance
Qian Zhang,Qichen Song,Xinyu Wang,Jingying Sun,Qing Zhu,Keshab Dahal,Xi Lin,Feng Cao,Jiawei Zhou,Shuo Chen,Gang Chen,Jun Mao,Zhifeng Ren +12 more
TL;DR: In this paper, a temperature-dependent carrier concentration can be realized by simultaneously introducing shallow and deep defect levels in PbTe, where iodine acts as the shallow donor level that supplies sufficient electrons and indium builds up the localized half-filled deep defect state in the band gap.