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Feng Liu

Researcher at Chinese Academy of Sciences

Publications -  696
Citations -  26496

Feng Liu is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Topological insulator & Graphene. The author has an hindex of 75, co-authored 628 publications receiving 21983 citations. Previous affiliations of Feng Liu include Virginia Commonwealth University & Center for Theoretical Studies, University of Miami.

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Intrinsic Current−Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping

TL;DR: Using first-principles transport calculations, it is shown that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10(3)-10(4), subthreshold swing of 60 meV per decade, and transconductance of 9.5 x 10 (3) Sm-1.
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Strain engineering of graphene: a review

TL;DR: The current progress in the strain engineering of graphene is reviewed and the electron-phonon coupling greatly enhanced by the biaxial strain and the strong pseudomagnetic field induced by the non-uniform strain with specific distribution is highlighted.
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Highly Ordered, Millimeter‐Scale, Continuous, Single‐Crystalline Graphene Monolayer Formed on Ru (0001)

TL;DR: In this article, a three-point bending configuration of a mechanically poled lead zirconate titanate ferroelectric ceramics was used to demonstrate the history effect and shape memory effect via the ferroelastic phase transition.
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Multivalency-Driven Formation of Te-Based Monolayer Materials: A Combined First-Principles and Experimental study.

TL;DR: The particle-swarm optimization method is used in combination with first-principles density functional theory calculations to predict a new category of 2D monolayers named tellurene, composed of the metalloid element Te, with stable 1T-MoS_{2}-like (α-Te), and metastable tetragonal (β-Te) and 2H-Mo