F
Fengning Guo
Researcher at Nanjing University of Posts and Telecommunications
Publications - 12
Citations - 306
Fengning Guo is an academic researcher from Nanjing University of Posts and Telecommunications. The author has contributed to research in topics: Organic field-effect transistor & Pentacene. The author has an hindex of 7, co-authored 12 publications receiving 229 citations.
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Journal ArticleDOI
Synergistic Effects of Self-Doped Nanostructures as Charge Trapping Elements in Organic Field Effect Transistor Memory.
Haifeng Ling,Jinyi Lin,Mingdong Yi,Bin Liu,Wen Li,Zongqiong Lin,Linghai Xie,Yan Bao,Fengning Guo,Wei Huang,Wei Huang +10 more
TL;DR: Two kinds of pentacene-based OFET memories with solution-processed amorphous and β-phase poly(9,9-dioctylfluorene) (PFO) films as charge trapping layers are fabricated, demonstrating the synergistic effects of combining both merits of polymer and nanoparticles into one electret.
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Solution-Processed Wide-Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field-Effect Transistor Memory.
Wen Li,Fengning Guo,Haifeng Ling,Liu Hui,Mingdong Yi,Peng Zhang,Wenjun Wang,Wenjun Wang,Linghai Xie,Wei Huang,Wei Huang +10 more
TL;DR: This versatile solution-processing approach to preparing WG3 NSs arrays as charge trapping sites allows for fabrication of high-performance nonvolatile OFET memory devices, which could be applicable to a wide range of WBG organic semiconductor materials.
Journal ArticleDOI
High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.
Wen Li,Fengning Guo,Haifeng Ling,Peng Zhang,Mingdong Yi,Laiyuan Wang,Dequn Wu,Linghai Xie,Wei Huang,Wei Huang +9 more
TL;DR: The synergistic effects of charge trapping in the discontinuous P13 and the charge‐trapping property of the poly(4‐vinylphenol) (PVP) layer remarkably improve the memory performance.
Journal ArticleDOI
Effect of thickness of polymer electret on charge trapping properties of pentacene-based nonvolatile field-effect transistor memory
Haifeng Ling,Wen Li,Li Huanqun,Mingdong Yi,Linghai Xie,Laiyuan Wang,Ma Yangxing,Yan Bao,Fengning Guo,Wei Huang,Wei Huang +10 more
TL;DR: In this paper, a set of pentacene-based organic field effect transistor (OFET) memory devices using different thicknesses (ranging from 17.8 to 100.4nm) of poly (N-vinylcarbazole) (PVK) as charge trapping layers were fabricated, and the dependences of thickness on charge trapping behaviors were systematically investigated.
Journal ArticleDOI
Floating-gate nanofibrous electret arrays for high performance nonvolatile organic transistor memory devices
Naien Shi,Dong Liu,Xiaolei Jin,Wandan Wu,Jun Zhang,Mingdong Yi,Linghai Xie,Fengning Guo,Lei Yang,Changjin Ou,Changjin Ou,Wei Xue,Wei Huang,Wei Huang +13 more
TL;DR: In this article, a floating-gate transistor memory based on electrospinning nanofibrous electret arrays exhibited a reliable controllable threshold voltage shift and effective charge-trapping ability which was obviously superior to the counterparts fabricated with widely employed spincoating technique.