Journal ArticleDOI
Synergistic Effects of Self-Doped Nanostructures as Charge Trapping Elements in Organic Field Effect Transistor Memory.
Haifeng Ling,Jinyi Lin,Mingdong Yi,Bin Liu,Wen Li,Zongqiong Lin,Linghai Xie,Yan Bao,Fengning Guo,Wei Huang,Wei Huang +10 more
TLDR
Two kinds of pentacene-based OFET memories with solution-processed amorphous and β-phase poly(9,9-dioctylfluorene) (PFO) films as charge trapping layers are fabricated, demonstrating the synergistic effects of combining both merits of polymer and nanoparticles into one electret.Abstract:
Despite remarkable advances in the development of organic field-effect transistor (OFET) memories over recent years, the charge trapping elements remain confined to the critical electrets of polymers, nanoparticles, or ferroelectrics. Nevertheless, rare reports are available on the complementary advantages of different types of trapping elements integrated in one single OFET memory. To address this issue, we fabricated two kinds of pentacene-based OFET memories with solution-processed amorphous and β-phase poly(9,9-dioctylfluorene) (PFO) films as charge trapping layers, respectively. Compared to the amorphous film, the β-PFO film has self-doped nanostructures (20–120 nm) and could act as natural charge trapping elements, demonstrating the synergistic effects of combining both merits of polymer and nanoparticles into one electret. Consequently, the OFET memory with β-PFO showed nearly 26% increment in the storage capacity and a pronounced memory window of ∼45 V in 20 ms programming time. Besides, the reten...read more
Citations
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Journal ArticleDOI
Small‐Molecule‐Based Organic Field‐Effect Transistor for Nonvolatile Memory and Artificial Synapse
Yu Yang,Qi-Hao Ma,Haifeng Ling,Wen Li,Wen Li,Ruolin Ju,Bian Linyi,Naien Shi,Yan Qian,Mingdong Yi,Linghai Xie,Wei Huang,Wei Huang +12 more
Journal ArticleDOI
When Flexible Organic Field-Effect Transistors Meet Biomimetics: A Prospective View of the Internet of Things.
Wei Shi,Yunlong Guo,Yunqi Liu +2 more
TL;DR: OFETs are revealed to be one of the best systems for mimicking sensory and nervous systems and their applications in biomimetic systems and future challenges in this research area are provided.
Journal ArticleDOI
Advances in flexible organic field-effect transistors and their applications for flexible electronics
TL;DR: In this paper , the material choice and device design for organic field effect transistor (FOFET) devices and circuits, as well as the demonstrated applications are summarized in detail, and the technical challenges and potential applications of FOFETs in the future are discussed.
Journal ArticleDOI
High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor
TL;DR: In this article, a flexible floating-gate organic transistor memory (FGOTM) with vertical transistor structures was investigated for the first time on a flexible substrate, and the results show that the memory properties of VFGOTMs are comparable or even better than traditional planar FGOTMs.
References
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Journal ArticleDOI
Functional organic field-effect transistors.
Yunlong Guo,Gui Yu,Yunqi Liu +2 more
TL;DR: The history, current status of research, main challenges and prospects for functional OFETs are all discussed, in order to provide a comprehensive overview of this field.
Journal ArticleDOI
Polymer and Organic Nonvolatile Memory Devices
TL;DR: In this article, the role of π-conjugated materials in the operation of nonvolatile memory devices is reviewed and a review of the state of the art with respect to these target specifications is presented.
Journal ArticleDOI
Towards the development of flexible non-volatile memories.
TL;DR: The flash memories, resistive random access memories and ferroelectric random access memory/ferroelectric field-effect transistor memories (FeRAM/FeFET) are considered as promising candidates for next generation non-volatile memory device.
Journal ArticleDOI
The Effect of Gate-Dielectric Surface Energy on Pentacene Morphology and Organic Field-Effect Transistor Characteristics
TL;DR: In this paper, the effects of the surface energy of gate dielectrics on pentacene morphology and the electrical properties of FETs are reported, using surface energy-controllable poly(imide-siloxane)s as gate-dielectric layers.
Journal ArticleDOI
Electron traps and hysteresis in pentacene-based organic thin-film transistors
TL;DR: In the absence of charge storage or slow polarization in the gate dielectric, the hysteresis in the currentvoltage (I−V) characteristics of pentacene-based organic thin-film transistors (OTFTs) is dominated by trapped electrons in the semiconductor as mentioned in this paper.