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Fengyou He

Researcher at China University of Mining and Technology

Publications -  7
Citations -  24

Fengyou He is an academic researcher from China University of Mining and Technology. The author has contributed to research in topics: Computer science & Pulse-width modulation. The author has an hindex of 1, co-authored 2 publications receiving 15 citations.

Papers
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Journal ArticleDOI

A Simplified PWM Strategy for Three-Level Converters on Three-Phase Four-Wire Active Power Filter

TL;DR: In this article, the authors proposed a new PWM strategy to simplify the selection process and the calculation of duration for three-level converters on three-phase four-wire active power filters.
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Improved Temperature Monitoring and Protection Method of Three-level NPC Application Based on Half-bridge IGBT Modules

TL;DR: In this article , an improved three-dimensional (3-D) coupled thermal model for insulated gate bipolar transistors (IGBTs) and related heatsink is constructed by considering the thermal coupling effects at both the device and the module level.
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A simplified PWM strategy based on MPC for NPC three-level APF systems

TL;DR: In this article, a simplified Pulse Width Modulation (PWM) strategy based on MPC is proposed in order to overcome the drawback of FCS-MPC, which has the disadvantages of unfixed switching frequency and large amount of calculations for three-level APF systems.
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Short-Circuit Fault Adaptive Analysis and Protection for SiC MOSFETs

TL;DR: Aiming at the short-circuit (SC) capability for silicon carbide (SiC) MOSFETs due to the limitation of the gate oxide process, that is, the ability of MOSFC to withstand large current and high voltage when the channel is turned on, the authors summarizes and analyses various SC fault types for SiC MOSFLETs, which are further simulated through a designed SC test platform with strict timing of control signals.

Improved Drain-source Voltage Detection Method for Short-circuit Protection of SiC MOSFET

TL;DR: In this article , a short-circuit detection method was proposed to enhance the self-adaptation to different shortcircuit faults of SiC MOSFET, as a result speeding up the protection speed.