F
Fernando Flores
Researcher at Autonomous University of Madrid
Publications - 382
Citations - 10083
Fernando Flores is an academic researcher from Autonomous University of Madrid. The author has contributed to research in topics: Scanning tunneling microscope & Electron. The author has an hindex of 48, co-authored 378 publications receiving 9785 citations. Previous affiliations of Fernando Flores include Complutense University of Madrid & Spanish National Research Council.
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Molecular orbital theory and tunnelling currents
TL;DR: In this paper, the parameters appearing in an effective tight-binding Hamiltonian are shown to be simply related to the tunnelling currents and the overlap between the different orbitals of the constituent atoms.
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Charge transfer for slow H atoms interacting with Al: Atomic levels and linewidths
TL;DR: The charge transfer of slow H atoms colliding with an Al(100) surface is studied by means of a linear combination of atomic orbitals method with local-density many-body contributions to calculate atomic levels and associated linewidths.
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Hot-electron lifetimes in metals: A combined ab initio calculation and ballistic electron emission spectroscopy analysis
Florian Ladstädter,Pilar F. De Pablos,Ulrich Hohenester,Peter Puschnig,Claudia Ambrosch-Draxl,Pedro L. de Andrés,Francisco J. Garcia-Vidal,Fernando Flores +7 more
TL;DR: In this paper, a first-principles analysis of ballistic electron emission spectroscopy ~BEES! was used to extract hot-electron lifetimes in metals, and the lifetimes were computed within an ab initio framework based on density-functional theory and the GW approximation, and used in a Keldysh Green function approach for the calculation of BEES currents.
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Molecular-orbital theory for the stopping power of atoms in the low-velocity regime : the case of helium in alkali metals
José J. Dorado,Fernando Flores +1 more
TL;DR: A free-parameter linear-combination-of-atomic-orbitals approach is presented for analysing the stopping power of slow ions moving in a metal and results show important variations in the stoppingPower of channeled atoms with respect to their mean values.
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Pseudopotential calculation of the surface band structure of Si(111) faces
TL;DR: In this article, the surface Green-function method is used to calculate the surface band structure of Si(111) faces as described by the conventional abrupt step model, yielding a single narrow band located in the absolute thermal gap, in qualitative agreement with previous tight binding calculations for this face, but differing from experimental data.