F
Fernando Flores
Researcher at Autonomous University of Madrid
Publications - 382
Citations - 10083
Fernando Flores is an academic researcher from Autonomous University of Madrid. The author has contributed to research in topics: Scanning tunneling microscope & Electron. The author has an hindex of 48, co-authored 378 publications receiving 9785 citations. Previous affiliations of Fernando Flores include Complutense University of Madrid & Spanish National Research Council.
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Non local electrodynamics of metal film systems
TL;DR: In this paper, a phenomenological theory of non local electrodynamics of metal/film systems is given in terms of a specularity parameter p for arbitrary 0 ~ p ~ 1 and applied to study the differential reflectivity of Ag films on an Al substrate.
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The principle of factorization of the surface Green function
TL;DR: In this paper, it was pointed out that the theorem of factorization of the surface Green function, previously proved for the eigenvalue problem of the Hamiltonian, applies generally for a surface which separates two media.
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Ultrafast atomic diffusion inducing a reversible (2√3x2√3) R30º ↔ (√3x√3) R30º transition on Sn/Si (111)∶B
Waked Srour,Daniel G. Trabada,José I. Martínez,Fernando Flores,José Ortega,M. Abuín,Yannick Fagot-Revurat,Bertrand Kierren,Amina Taleb-Ibrahimi,Daniel Malterre,Antonio Tejeda +10 more
TL;DR: In this paper, a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit cell divides its area by a factor of 4 at 250 degrees C. This phase transition is explained by the 24-fold degeneracy of the ground state and a novel diffusive mechanism, where four Sn atoms arranged in a snakelike cluster wiggle at the surface exploring collectively the different quantum mechanical ground states.
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Schottky-barriers for clean, etched and reactive metal-semiconductor junctions
Enrique Louis,Fernando Flores +1 more
TL;DR: In this article, a unified simple model for clean, etched and reactive metal-semiconductor junctions is proposed, where the selfconsistent redistribution of charge at the junction and its density of states are analyzed as a function of the interface conditions.
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Electron correlation effects at semiconductor surfaces and interfaces: Si(111)-5x5, Si(111)-7x7 and SnGe(111)
TL;DR: In this article, the correlation effects associated with the dangling bond surface states of Si(111)-5×5, Si( 111)-7×7 and Sn Ge (111) -3×3 are analyzed.