F
Finella Lee
Researcher at National Taiwan University
Publications - 3
Citations - 207
Finella Lee is an academic researcher from National Taiwan University. The author has contributed to research in topics: High-electron-mobility transistor & Transistor. The author has an hindex of 2, co-authored 3 publications receiving 167 citations.
Papers
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Journal ArticleDOI
Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors
TL;DR: In this paper, an enhancement-mode HEMT composed of p-type GaN/AlGaN/GaN was fabricated, and the gate Schottky barrier now correlates to the valence band of the semiconductor.
Journal ArticleDOI
Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer
TL;DR: In this article, an enhancement-mode high-electron mobility transistor (HEMT) was demonstrated by inserting a p-type GaN layer underneath the gate electrode to deplete surface leakage current.
Journal ArticleDOI
Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices
TL;DR: In this paper, a large-size device in AlGaN/GaN high-electron-mobility transistor (HEMT) was demonstrated, where the saturation current of D-mode HEMTs is over 6A.