Journal ArticleDOI
Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer
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TLDR
In this article, an enhancement-mode high-electron mobility transistor (HEMT) was demonstrated by inserting a p-type GaN layer underneath the gate electrode to deplete surface leakage current.Abstract:
An enhancement-mode (E-mode) high-electron mobility transistor (HEMT) was demonstrated by inserting a p-type GaN layer underneath the gate electrode. The effects of process flows and device structures on the electrical properties are investigated in this paper. We demonstrated a threshold voltage (Vth) of 4.3 V by adjusting the built-in voltage of the diode formed between the p-GaN and channel by the alloy temperature. Next, we found the existence of parallel conduction paths of the p-GaN layer and 2-D electron gas (2DEG) channel in such a HEMT structure. By removing p-GaN above the gate-source and gate-drain regions, current conduction migrates from p-GaN to 2DEG channel. The process window of the p-GaN residual thickness to ensure a steady forward current-voltage operation was estimated to be 10±5 nm in our case. Finally, with the p-GaN underneath the gate contact to deplete surface leakage current, an E-mode HEMT with a breakdown voltage (VBD) of 1630 V is achieved.read more
Citations
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Journal ArticleDOI
GaN Technology for Power Electronic Applications: A Review
TL;DR: In this article, a review of the fundamental material properties of gallium nitride (GaN) as they relate to silicon carbide (SiC) and SiC is presented.
Journal ArticleDOI
Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs
TL;DR: In this paper, the impact of the gate contact on the threshold voltage stability in p-GaN gate AlGaN/GaN heterojunction field effect transistors with double pulse measurements was investigated.
Journal ArticleDOI
Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors
Tian-Li Wu,Denis Marcon,Shuzhen You,Niels Posthuma,Benoit Bakeroot,Steve Stoffels,Marleen Van Hove,Guido Groeseneken,Stefaan Decoutere +8 more
TL;DR: In this paper, the temperature dependence of the forward bias gate breakdown has been characterized for enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors.
Journal ArticleDOI
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate
Isabella Rossetto,Matteo Meneghini,Oliver Hilt,Eldad Bahat-Treidel,Carlo De Santi,Stefano Dalcanale,Joachim Wuerfl,Enrico Zanoni,Gaudenzio Meneghesso +8 more
TL;DR: In this paper, the authors demonstrate the time-dependent failure of GaN-on-Si power high-electron-mobility transistors with p-GaN gate, submitted to a forward gate stress.
Journal ArticleDOI
Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors
TL;DR: In this paper, an enhancement-mode HEMT composed of p-type GaN/AlGaN/GaN was fabricated, and the gate Schottky barrier now correlates to the valence band of the semiconductor.
References
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Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Oliver Ambacher,B. E. Foutz,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,A. J. Sierakowski,William J. Schaff,L.F. Eastman,Roman Dimitrov,A. Mitchell,Martin Stutzmann +12 more
TL;DR: In this paper, a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance-voltage profiling measurements is used to calculate the polarization induced sheet charge bound at the AlGaN/GaN interfaces.
Journal ArticleDOI
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
TL;DR: In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.
Journal ArticleDOI
Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda +8 more
TL;DR: In this paper, a gate injection transistor (GIT) was proposed to increase the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation.
Journal ArticleDOI
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
TL;DR: In this paper, a novel approach was proposed to fabricate high-performance enhancement mode (E-mode) AlGaN/GaN HEMTs based on fluoride-based plasma treatment of the gate region.